Atomistic Simulations of Device Physics in Monolayer Transition Metal Dichalcogenide Tunneling Transistors

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Title
Atomistic Simulations of Device Physics in Monolayer Transition Metal Dichalcogenide Tunneling Transistors
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 63, Issue 1, Pages 311-317
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-11-19
DOI
10.1109/ted.2015.2497082

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