Article
Chemistry, Multidisciplinary
Jinho Jeong, Yeongmin Jang, Jongyoun Kim, Sosu Kim, Wansik Kim
Summary: This paper presents a high-power amplifier integrated circuit operating at the W-band, utilizing GaN-on-Si technology and low-impedance microstrip lines for impedance matching. By combining two three-stage amplifiers with a Lange coupler, it achieved high output power and power density.
APPLIED SCIENCES-BASEL
(2021)
Article
Computer Science, Hardware & Architecture
Luong Duy Manh, Van-Phuc Hoang, Xuan Nam Tran
Summary: This paper presents a design method for a compact, low-cost, and high-efficiency microwave power amplifier for 5G wireless communication applications. The proposed approach combines harmonically tuned technique to improve efficiency and careful design of input and output matching networks to simplify the structure and minimize the size of the power amplifier.
MOBILE NETWORKS & APPLICATIONS
(2022)
Article
Engineering, Electrical & Electronic
Yang Lu, Xin Xu, Hongbo Han, Bochao Zhao, Hengshuang Zhang, Ziyue Zhao, Chupeng Yi, Yuchen Wang, Lixin Guo, Xiaohua Ma
Summary: This paper presents the RMID method for designing broadband power amplifiers, which converts port impedances of devices to smaller real impedances through pre-matching networks to achieve wider frequency band characteristics. The distribution curve of impedance points is tensioned or compressed based on the characteristics of different matching elements, leading to impedance matching to 50 ohms for smaller impedances.
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
(2021)
Article
Engineering, Electrical & Electronic
Yoshitaka Niida, Masaru Sato, Toshihiro Ohki, Norikazu Nakamura
Summary: In this study, a wideband gallium nitride power amplifier was fabricated and its performance was compared with a power amplifier using a common-mode combiner. The results showed that the power amplifier with a differential-mode combiner exhibited higher output power and power-added efficiency than the power amplifier using a common-mode combiner. Additionally, the power amplifier with the differential-mode combiner showed significant second-harmonic suppression, making it a more efficient and effective option.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
(2021)
Article
Engineering, Electrical & Electronic
Han Zhou, Jose-Ramon Perez-Cisneros, Bjorn Langborn, Thomas Eriksson, Christian Fager
Summary: This letter introduces a design and network synthesis approach for a power amplifier to achieve wideband and efficient performance with a compact circuit size. A prototype is implemented to demonstrate the effectiveness of the design method.
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Jason Soric, Nicholas Kolias, Jeffery Saunders, Jeffery Kotce, Andrew Brown, Christopher Rodenbeck, R. S. Gyurcsik
Summary: This article presents a compact W-band pulsed solid-state amplifier that utilizes W-band gallium nitride (GaN) monolithic microwave integrated circuits and low-loss split-waveguide power combining. The amplifier has high output power, small size, and light weight, and it also integrates power conversion and pulse modulation circuitry.
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Takaaki Yoshioka, Kenji Harauchi, Takumi Sugitani, Hiroaki Maehara, Takashi Yamasaki, Hiroaki Ichinohe, Miyo Miyashita, Kazuya Yamamoto, Seiki Goto
Summary: This study presents Ku-band 70- and 30-W-class GaN power amplifiers with low third-order intermodulation distortion over a wide offset frequency range, achieving high peak output power. The output-matching circuit design with difference-frequency short circuits has been validated, showing excellent output transfer characteristics focusing on IMD3. These PAs demonstrate record output power levels over a wide frequency range, compared to previously reported Ku-band GaN PAs for multi-carrier SatComs.
IEEE JOURNAL OF SOLID-STATE CIRCUITS
(2021)
Article
Engineering, Manufacturing
Naoya Okamoto, Masaru Sato, Masato Nishimori, Yusuke Kumazaki, Toshihiro Ohki, Naoki Hara, Keiji Watanabe
Summary: The study found that GaN-on-GaN HEMTs have excellent heat dissipation characteristics, maintaining temperatures below 40 degrees Celsius during microwave heating, with results showing good agreement between simulated and measured data.
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
(2021)
Article
Engineering, Aerospace
Xiao-Dong Jing, Shi-Chang Zhong, Hai-Long Wang, Fei You
Summary: This article describes the design, testing, and space qualification of a high-power and high-efficiency 150W GaN solid-state amplifier (SSPA) used in the BeiDou Navigation Satellite System (BDS). The SSPA has proven to be reliable and efficient, and has been successfully applied to multiple BeiDou navigation satellites.
IEEE TRANSACTIONS ON AEROSPACE AND ELECTRONIC SYSTEMS
(2022)
Article
Engineering, Electrical & Electronic
Lu-Chuan Zhang, Long-Xing Shi
Summary: This article presents a novel design of a Class-F monolithic microwave integrated circuit (MMIC) power amplifier (PA) operating at L-band with a power-added-efficiency (PAE) better than 70%. Through the use of load/source-pull techniques and LC resonators, the design achieves optimal impedances at fundamental and harmonic frequencies, resulting in highly efficient performance.
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Wenjian Liu, Brian Romanczyk, Matthew Guidry, Nirupam Hatui, Christian Wurm, Weiyi Li, Pawana Shrestha, Xun Zheng, Stacia Keller, Umesh K. Mishra
Summary: This study reports on the W-band power performance of N-polar GaN deep recess MIS-HEMTs using a new ALD ruthenium gate metallization process. The use of deep recess structure helps control DC-RF dispersion and increase conductivity in the access regions, while ALD ruthenium effectively fills narrow T-gate stems to achieve shorter gate lengths and lower gate resistance. With a gate length scaled down to 48 nm, a record high 8.1 dB linear transducer gain was achieved at 94 GHz, resulting in a record 33.8% power-added efficiency and output power density of 6.2 W/mm.
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Paul Saad, Yonghai Jin, Christian Fager, Rui Hou
Summary: This article presents a dual-input dual-output dualband four-way Doherty power amplifier (DPA) architecture that allows linearized operation in one frequency band while being immune to load switching in the other frequency band. The proposed technique is validated through the design, implementation, and measurement of a prototype circuit operating at 1.85- and 2.65-GHz bands with 70-MHz bandwidth for each band. The prototype dual-band DPA (DB-DPA) achieves high peak output power and good efficiency, demonstrating its potential for unsynchronized TDD applications.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
(2023)
Article
Engineering, Electrical & Electronic
Yi-Fan Tsao, Ping-Hsun Chiu, Serguei Chevtchenko, Ina Ostermay, Joachim Wuerfl, Heng-Tung Hsu
Summary: This article presents the application of FBH's sputtered Iridium gate technology for the design and realization of a highly robust power amplifier (PA) intended for satellite communication systems at millimeter-wave frequencies. The PA demonstrates excellent performance even after being subjected to high-level RF stress at an elevated ambient temperature.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Bharath Cimbili, Christian Friesicke, Friedbert van Raay, Sandrine Wagner, Mingquan Bao, Rudiger Quay
Summary: In this letter, two high-power gallium nitride (GaN) power amplifiers (PAs) in the Satcom E-band (71-86 GHz) with output powers of 2.6 and 4 W are reported. The design incorporates an ultralow-loss ON-chip integrated power combiner. The unit PA achieves a saturated output power (P-SAT) of 34.2 dBm (2.6 W), a peak power-added-efficiency (PAE) of 22%, and a power gain of 16.2 dB at 74 GHz, while the balanced PA achieves a PSAT of 36 dBm (4 W), P1 dB of 35.6 dBm (3.63 W), and a PAE of 15.3% at 80 GHz. To the best of the authors' knowledge, this is the highest output power (4 W) and PAE (22%) reported in any of the III-V technologies at E-band.
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS
(2023)
Article
Computer Science, Hardware & Architecture
Yujia Wang, Jincheng Zhang, Yong Chen, Junyan Ren, Shunli Ma
Summary: This article presents a design method for a GaN wideband millimeter-wave power amplifier incorporating the Chebyshev matching technique. The designed amplifier achieves high in-band gain, wide bandwidth, and high power added efficiency, making it a promising solution for K-band applications.
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
(2023)
