High Performance and Stable Flexible Memory Thin-Film Transistors Using In–Ga–Zn–O Channel and ZnO Charge-Trap Layers on Poly(Ethylene Naphthalate) Substrate

Published 2016 View Full Article

Authors

Keywords

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

Volume 63, Issue 4, Pages 1557-1564

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2016-03-01

DOI

10.1109/ted.2016.2531087

Ask authors/readers for more resources

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started

IEEE TRANSACTIONS ON ELECTRON DEVICES

Ask authors/readers for more resources

Protocol

Reagent

Reprint

Find the ideal target journal for your manuscript

Ask a Question. Answer a Question.