Strain-controlled electrical transport performance of epitaxial LaNiO3 films with Sr3Al2O6 buffer layer

High-quality epitaxial LaNiO3 films have been grown on (001)-oriented SrTiO3 substrate with Sr3Al2O6 buffer layer by pulsed laser deposition. Different from traditional LaNiO3 metallic behavior, LaNiO3/Sr(3)Al2O(6) films exhibit semi-conductor behavior. In-plane lattice parameters of the LaNiO3 films are changed by in-plane strain from Sr(3)Al2O(6). The valence state of Ni in the film is related to in-plane strain. Ni3+ is the dominant factor for LaNiO(3 )films to maintain metallic behavior. Meanwhile, with the thickness of LaNiO3 increasing, the resistivity of LaNiO3/Sr3Al2O6 films can be adjusted. Conductive mechanism of LaNiO3 and all LaNiO3/Sr(3)Al(2)O(6 )films can be attributed to different Ni3+/Ni2+ ratios.

Automated summary

High-quality epitaxial LaNiO3 films with semiconductor behavior have been successfully grown on (001)-oriented SrTiO3 substrate using pulsed laser deposition. The in-plane lattice parameters and resistivity of the LaNiO3/Sr3Al2O6 films can be adjusted through thickness and in-plane strain, and the conductive mechanism is attributed to the Ni3+/Ni2+ ratios.