Article
Engineering, Electrical & Electronic
Samyuktha K. Reddy, Mandeep Singh
Summary: This study demonstrates the use of a MISIM waveguide structure for ethanol sensing, showing that in the presence of harmful ethanol, the electric field in a low refractive index slot undergoes a red-shift in wavelength. By adjusting the silicon porosity and physical dimensions, the red-shift can be controlled. The optimized sensor metrics obtained through simulations and the fabrication stages are described. The sensor is found to be feasible for ethanol detection in hazardous environments.
IEEE SENSORS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
A. H. Abdullah Ripain, N. A. A. Zulkifli, C. L. Tan, W. H. Abd Majid, R. Zakaria
Summary: This study reports a high-yield synthesis method for MoS2 flakes and demonstrates the importance of metal choice and Schottky barrier height tuning in increasing the performance of photodetectors.
OPTICAL AND QUANTUM ELECTRONICS
(2022)
Article
Polymer Science
Chunlian Liu, Peipei Huang, Wei Wang, Miao Tan, Fangbao Fu, Yunhui Feng
Summary: In this study, composite nanomaterials of TiO2 nanotube arrays (TiO2 NTAs) and polyaniline (PANI) were successfully prepared on titanium sheets using an anodic oxidation electrochemical method. The TiO2 NTA/PANI composite materials exhibited excellent UV photosensitivity and responsiveness, as well as good stability and reproducibility. The p-n heterostructure formed inside the composites hindered the recombination of photogenerated electron-hole pairs and improved their utilization of UV light. This work provides a theoretical basis for the application of metal oxides in UV photodetectors, which is important for the development of UV photodetectors.
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Wen-Luh Yang, Shun-Cheng Shih, Yu-Xing Zheng
Summary: This study investigates how quiescent-points affect the performance of ultrasonic spray pyrolysis deposited zinc oxide-based phototransistors, identifying a total of 8 different quiescent-points. By manipulating gate bias and drain bias, the accumulation and depletion states of the phototransistor can be controlled, influencing its performance. The phototransistor demonstrates four operation modes, each corresponding to a specific quiescent point, with characteristics such as crystal structure, oxygen deficiency, bandgap, and trap energy levels playing a role in determining the overall performance.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Materials Science, Multidisciplinary
Duygu Yesiltepe Ozcelik, Burcak Ebin, Srecko Stopic, Sebahattin Gurmen, Bernd Friedrich
Summary: Mixed oxides NiO/ZnO/Al2O3 were successfully synthesized via ultrasonic spray pyrolysis method, and the effects of different temperatures on the synthesis process were investigated. Characterization analysis using SEM, EDS, XRD and Raman spectroscopy revealed the presence of spinel phases in Al2O3, NiO-Al2O3 and ZnO-Al2O3 systems. The coexistence of oxide phases, supported by the Raman peaks, strongly impacted the overall properties of the nanocomposite.
Article
Optics
I. Loyola Poul Raj, S. Valanarasu, R. S. Rimal Isaac, M. Ramudu, Yugandhar Bitla, V Ganesh, I. S. Yahia
Summary: NiO thin films with different additions of Ag were grown using the NSP method, and a photodetector was fabricated using NiO:Ag thin films. The structural, morphological, compositional, optical, and electrical properties of the films were studied. XRD studies confirmed the formation of nanoparticles with Ag addition and Ag phase was formed after 3% Ag addition. EDS analysis confirmed the presence of all elements. The energy band gap of the films ranged from 3.25-3.45 eV with 1-3% Ag addition. The photodetector exhibited increased responsivity with 1% Ag addition, but decreased at higher Ag concentrations.
Article
Engineering, Electrical & Electronic
Douglas Henrique Vieira, Gabriel Leonardo Nogueira, Rogerio Miranda Morais, Lucas Fugikawa-Santos, Keli Fabiana Seidel, Neri Alves
Summary: In this study, a transparent and printed ZnO-based electrolyte-gated transistor (EGT) using cellulose electrolyte was reported. It showed low-voltage operation, high on-state current, and high field-effect mobility. The device exhibited a multiparametric response as a UV sensor when exposed to different levels of UV irradiance.
SENSORS AND ACTUATORS A-PHYSICAL
(2022)
Article
Materials Science, Ceramics
Basar Suer, Macit Ozenbas
Summary: Fluorine doped tin dioxide (FTO) coatings were successfully deposited on AISI 304 stainless steel (SS) substrates using ultrasonic spray pyrolysis (USP) technique, with TiO2 as the only insulating intermediate layer formed. The TiO2 layer helped to improve the dielectric breakdown resistance of FTO coating, leading to an enhanced efficiency in converting electrical energy into heat.
CERAMICS INTERNATIONAL
(2021)
Article
Optics
Ameera J. Kadhm, Raid A. Ismail, Ahmed F. Atwan
Summary: MnS/Si and cerium-doped MnS/Si heterojunction photodetectors were prepared using spray pyrolysis technique, with investigations into the impact of doping concentration on the structural, optical, and electrical properties of the MnS films. The presence of cerium in the doped films led to changes in crystallinity and morphology, with a decrease in optical transmittance and a shift in optical energy gap. The current-voltage characteristics of the photodetector showed a maximum responsivity at 350 nm for the Mn:Ce (1 wt%)/Si photodetector.
Article
Materials Science, Coatings & Films
Sergey Mutilin, Kirill Kapoguzov, Victor Prinz, Lyubov Yakovkina
Summary: This study investigates the phase transition properties of VO2 films and the interface effects with SiO2 buffer layers. The results indicate that the phase transition characteristics differ in VO2 films grown on dry and wet SiO2, with the dry SiO2 exhibiting higher electric-current modulation capabilities.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2022)
Article
Nanoscience & Nanotechnology
Mohammad M. Afandi, Jongsu Kim
Summary: A dual-mode device capable of emitting UV-A light and detecting solar-blind UV light was fabricated using a ZnGa2O4 (ZGO) film in a metal-oxide-semiconductor (MOS) structure. The device demonstrated bi-functionality by changing the electric configurations. This research provides a feasible method for developing multifunctional electronic devices based on MOS structure.
JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES
(2023)
Article
Physics, Applied
Zamir Ul Hassan, Razwan Siddique, Syeda Amna Sajjad, Zeshan Adeel Umer, Shujaht Bukhari, Muhammad Anwar-Ul-Haq, Mohsin Rafique, Syed Raza Ali Raza
Summary: In this study, a type-III heterojunction based on pulsed-laser-deposited vanadium dioxide (VO2) and p-type silicon (p-Si) substrate was successfully realized, showing a large self-powered and room-temperature photoresponse to various LED wavelengths. The temperature-dependent properties of the junction exhibit a sharp transition near 337 K, corresponding to a metal-insulator phase transition, which could potentially pave the way for temperature-tunable photodetectors.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Chemistry, Physical
Tingting Wang, Bingguo Xue, Hao Cui, Yingying Zhang, Manmen Liu, Jialin Chen, Ming Wen, Wei Wang, Xudong Sun, Shaohong Liu
Summary: LuAG:Ce is an important color converter in the white lighting industry, with LuAG:Ce film offering advantages such as efficient heat dissipation and rare earth conservation. The preparation process and photoluminescence performance of LuAG:Ce film were investigated, showing that increasing Ce3+ doping concentration enhanced the emission intensity. By coupling Ce3+ doped LuAG:Ce film with a blue laser, white light emission was successfully achieved.
Article
Engineering, Electrical & Electronic
Husam R. Abed, Ameer Khudadad, Fadhil Mahmood Oleiwi
Summary: In this study, p-NiO was deposited on an n-Si substrate using spray pyrolysis, and the effect of the distance between the substrate and the nozzle on the material properties was investigated. The results showed that the film exhibited the highest nucleation and crystallization at a distance of 25 cm, and demonstrated good conductivity, photoresponse, and stability.
OPTICAL AND QUANTUM ELECTRONICS
(2022)
Article
Chemistry, Physical
Binbin Xu, Honglie Shen, Yajun Xu, Jiawei Ge, Shun Wang, Qichen Zhao, Binkang Lai
Summary: In this work, inverted-pyramid light trapping texture on industrial-sized p-type silicon was prepared using a rapid and repeatable one-step Cu-MACE process at room temperature. Various TMOs-Si heterojunction photodetectors were fabricated, with a high-performance NIR PD demonstrated through optimizing device structure and layer thickness. The study paves the way for mass production of TMOs-Si heterojunction PDs using inverted-pyramid textured silicon.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Ching-Sung Lee, Yun-Chung Yang
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2017)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Yun-Chung Yang, Guan-Jyun Liu, Ruei-Chin Huang
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2017)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Yu-Liang Hsu, Heng-Yi Su, Ruei-Chin Huang, Fu-Yuan Hou, Guan-Cheng Tu, Wei-Hsin Liu
IEEE SENSORS JOURNAL
(2018)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Ruei-Chin Huang
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2018)
Article
Engineering, Electrical & Electronic
Ching-Sung Lee, Wei-Chou Hsu, Yi-Ping Huang, Han-Yin Liu, Wen-Luh Yang, Shen-Tin Yang
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2018)
Article
Engineering, Electrical & Electronic
Ching-Sung Lee, Wei-Chou Hsu, Han-Yin Liu, Yu-Chang Chen
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2018)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Chun-Chen Hung, Wei-Chou Hsu
IEEE ELECTRON DEVICE LETTERS
(2018)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Guan-Jyun Liu
IEEE SENSORS JOURNAL
(2018)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Ruei-Chin Huang
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Guan-Jyun Liu
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2019)
Article
Engineering, Electrical & Electronic
Yi-Ping Huang, Wei-Chou Hsu, Han-Yin Liu, Ching-Sung Lee
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Wei-Hsin Liu, Hung-Sheng Chu
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Wei-Chou Hsu, Jui-Hsuan Chen, Pei-Huang Hsu, Ching-Sung Lee
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Hao-Chun Hung, Wei-Ting Chen
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Pei-Huang Hsu
IEEE SENSORS JOURNAL
(2020)