4.8 Article

Design of Near-Infrared Nonfullerene Acceptor with Ultralow Nonradiative Voltage Loss for High-Performance Semitransparent Ternary Organic Solar Cells

Journal

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
Volume 61, Issue 19, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.202116111

Keywords

Near-infrared; Nonfullerene Acceptor; Nonradiative Voltage Loss; Power Conversion Efficiency; Semitransparent Organic Solar Cells

Funding

  1. National Key R&D Program of China [2019YFA0705900, 2017YFA0204701]
  2. National Natural Science Foundation of China [22175187, 91833304, 21905163, 21805289, 22171273]
  3. Youth Innovation Promotion Association CAS [2020031]

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Semitransparent organic solar cells (ST-OSCs) are important applications of organic solar cells, but the current high-performance ST-OSCs still lack a low enough optical band gap to achieve the optimal balance between power conversion efficiency and average visible transmittance. By designing and synthesizing a new acceptor SN and incorporating it into the PM6:Y6 system, the performance of the solar cells can be significantly improved.
Semitransparent organic solar cells (ST-OSCs) are considered as one of the most valuable applications of OSCs and a strong contender in the market. However, the optical band gap of current high-performance ST-OSCs is still not low enough to achieve the optimal balance between power conversion efficiency (PCE) and average visible transmittance (AVT). An N-substituted asymmetric nonfullerene acceptor SN with over 40 nm bathochromically shifted absorption compared to Y6 was designed and synthesized, based on which the device with PM6 as donor obtained a PCE of 14.3 %, accompanied with a nonradiative voltage loss as low as 0.15 eV. Meanwhile, ternary devices with the addition of SN into PM6 : Y6 can achieve a PCE of 17.5 % with an unchanged open-circuit voltage and improved short-circuit current. Benefiting from extended NIR absorption and lowered voltage loss, ST-OSCs based on PM6 : SN : Y6 were fabricated and the optimized device demonstrated a PCE of 14.0 % at an AVT of 20.2 %, which is the highest PCE at an AVT over 20 %.

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