4.8 Article

High-Polarizability Organic Ferroelectric Materials Doping for Enhancing the Built-In Electric Field of Perovskite Solar Cells Realizing Efficiency over 24%

Journal

ADVANCED MATERIALS
Volume 34, Issue 14, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202110482

Keywords

built-in electric field; charge-carrier transport; organic ferroelectric material doping; partial polarization

Funding

  1. National Key Research and Development Program of China [2020YFB1506400]
  2. National Natural Science Foundation of China [51922074, 22075194, 51973150, 51820105003]
  3. Natural Science Foundation of the Jiangsu Higher Education Institutions of China [20KJA430010, 19KJA320009]
  4. Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
  5. National Postdoctoral Program for Innovative Talents [BX2021205]
  6. Collaborative Innovation Center of Suzhou Nano Science and Technology
  7. Tang Scholar

Ask authors/readers for more resources

An effective method of enhancing the built-in electric field intensity in perovskite solar cells is reported in this study. By doping an organic ferroelectric material, PVDF:DH, an additional electric field is generated, promoting charge-carrier transport, perovskite growth, and improving the overall performance and stability of the solar cells.
The built-in electric field (BEF) intensity of silicon heterojunction solar cells can be easily enhanced by selective doping to obtain high power conversion efficiencies (PCEs), while it is challenging for perovskite solar cells (pero-SCs) because of the difficulty in doping perovskites in a controllable way. Herein, an effective method is reported to enhance the BEF of FA(0.92)MA(0.08)PbI(3) perovskite by doping an organic ferroelectric material, poly(vinylidene fluoride):dabcoHReO(4) (PVDF:DH) with high polarizability, that can be driven even by the BEF of the device itself. The polarization of PVDF:DH produces an additional electric field, which is maintained permanently, in a direction consistent with that of the BEF of the pero-SC. The BEF superposition can more sufficiently drive the charge-carrier transport and extraction, thus suppressing the nonradiative recombination occurring in the pero-SCs. Moreover, the PVDF:DH dopant benefits the formation of a mesoporous PbI2 film, via a typical two-step processing method, thereby promoting perovskite growth with high crystallinity and a few defects. The resulting pero-SC shows a promising PCE of 24.23% for a 0.062 cm(2) device (certified PCE of 23.45%), and a remarkable PCE of 22.69% for a 1 cm(2) device, along with significantly improved moisture resistances and operational stabilities.

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