4.8 Article

Spin-Orbit Torque Switching in an All-Van der Waals Heterostructure

Journal

ADVANCED MATERIALS
Volume 34, Issue 8, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202101730

Keywords

current-induced magnetization switching; energy-efficient SOT device; interface engineering; spin-orbit torque; van der Waals materials

Funding

  1. Samsung Advanced Institute of Technology (SAIT)
  2. Alexander von Humboldt Foundation Sofia Kovalevskaja Award
  3. German Federal Ministry of Education and Research's MINERVA ARCHES Award
  4. Max Planck Society
  5. Global Frontier Hybrid Interface Materials of the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [2013M3A6B1078872]
  6. Korea Basic Science Institute (National research Facilities and Equipment Center) - Ministry of Education [2020R1A6C101A202]
  7. National Research Foundation of Korea (NRF) - Korea government (MSIT) [2020R1A2C2013484]
  8. Institute for Basic Science (IBS) through the Center for Artificial Low Dimensional Electronic Systems [IBS-R014-D1]
  9. National Research Foundation of Korea (NRF) through SRC [2018R1A5A6075964]
  10. Max Planck-POSTECH Center for Complex Phase Materials [2016K1A4A4A01922028]
  11. National Research Foundation of Korea (NRF) - Korean Government [2016R1A5A1008184, 2020R1C1C1013241, 2020M3H3A1100839]
  12. Samsung Science and Technology Foundation [SSTF-BA1702-05]
  13. Samsung Electronics Co., Ltd. [IO201207-07801-01]
  14. National Research Foundation of Korea [4199990514509, 2020R1A2C2013484, 2020R1C1C1013241, 2020M3H3A1100839, 2020R1A6C101A202, 2016R1A5A1008184] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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The study explores the control of magnetization in ferromagnets using spin-orbit torque, highlighting the use of vdW topological materials WTe2 and ferromagnet Fe3GeTe2 to meet the requirements for energy-efficient spintronic devices. By engineering vdW-type materials, a significantly reduced switching current density is achieved, offering a promising approach for energy-efficient magnetization control in SOT-based spintronics.
Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency (xi) and electrical conductivity (sigma), and an efficient spin injection across a transparent interface. Herein, single crystals of the van der Waals (vdW) topological semimetal WTe2 and vdW ferromagnet Fe3GeTe2 are used to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of xi approximate to 4.6 and sigma approximate to 2.25 x 10(5) omega(-1) m(-1) for WTe2. Moreover, the significantly reduced switching current density of 3.90 x 10(6) A cm(-2) at 150 K is obtained, which is an order of magnitude smaller than those of conventional heavy-metal/ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics.

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