4.8 Article

Visible-Blind ZnMgO Colloidal Quantum Dot Downconverters Expand Silicon CMOS Sensors Spectral Coverage into Ultraviolet and Enable UV-Band Discrimination

Journal

ADVANCED MATERIALS
Volume 34, Issue 10, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202109498

Keywords

band discrimination; downconverting films; silicon CMOS sensors; ultraviolet sensors; ZnMgO quantum dots

Funding

  1. European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme [725165]
  2. Spanish Ministry of Economy and Competitiveness (MINECO)
  3. Fondo Europeo de Desarrollo Regional (FEDER) [TEC201788655-R]
  4. Fundacio Privada Cellex
  5. program CERCA
  6. Spanish Ministry of Economy and Competitiveness through the Severo Ochoa Programme for Centres of Excellence in RD [SEV-2015-0522]

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Selective spectral detection of ultraviolet (UV) radiation is highly important in various fields, and this study introduces a quantum dot-based sensing scheme that expands the spectral coverage of silicon complementary metal-oxide-semiconductor (CMOS) sensors into the UV range, enabling efficient UV detection without affecting visible and UV-band discrimination.
Selective spectral detection of ultraviolet (UV) radiation is highly important across numerous fields from health and safety to industrial and environmental monitoring applications. Herein, a nontoxic, visible-blind, quantum dot (QD)-based sensing scheme that expands the spectral coverage of silicon complementary metal-oxide-semiconductor (CMOS) sensors into the UV, enabling efficient UV detection without affecting the sensor performance in the visible and UV-band discrimination, is reported. This scheme uses zinc magnesium oxide (ZnMgO) QDs with compositionally tunable absorption across UV and high photoluminescence quantum yield in the visible. The efficient luminescence and large Stokes shift of these QDs are exploited herein to act as an efficient downconverting material that enhances the UV sensitivity of Si-photodetectors (Si-PDs). A Si-PD integrated with the QDs results in a ninefold improvement in photoresponsivity from 0.83 to 7.5 mA W-1 at 260 nm. Leveraging the tunability of these QDs, a simple UV-band identification scheme is further reported, which uses two distinct-bandgap ZnMgO QDs stacked in a tandem architecture whose spectral emission color depends on the UV-band excitation light. The downconverting stack enables facile discrimination of UV light using a standard CMOS image sensor (camera) or by the naked eye and avoids the use of complex optics.

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