4.8 Article

Quenching-Resistant Multiresonance TADF Emitter Realizes 40% External Quantum Efficiency in Narrowband Electroluminescence at High Doping Level

Journal

ADVANCED MATERIALS
Volume 34, Issue 3, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202106954

Keywords

doping; multiresonance; narrowband electroluminescence; quenching resistance

Funding

  1. Natural Science Foundation of China [51903159, 52130308]
  2. Shenzhen Science and Technology Program [KQTD20170330110107046, JCYJ20190808151209557]
  3. China Postdoctoral Science Foundation [2020M682852, 2019M663065]

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This study introduces a highly emissive molecule with enhanced quenching resistance by segregating the planar MR-TADF skeleton using two bulky carbazolyl units, which significantly improves the performance of corresponding devices with a maximum external quantum efficiency of 40.0% and a full width at half maximum of 25 nm. The steric effect of the bulky carbazolyl units largely removes the formation of detrimental excimers/aggregates, leading to an OLED example that can achieve narrow bandwidth and high EL efficiency surpassing 40% to date.
Multiresonance thermally activated delayed fluorescence (MR-TADF) emitters manifest great potential for organic light-emitting diodes (OLEDs) due to their high exciton-utilization efficiency and narrowband emission. Nonetheless, their tendency toward self-quenching caused by strong interchromophore interactions would induce doping sensitivity and deteriorate the device performances, and effective strategy to construct quenching-resistant emitters without sacrifycing color purity is still to be developed. By segregating the planar MR-TADF skeleton using two bulky carbazolyl units, herein a highly emissive molecule with enhanced quenching resistance is reported. The steric effect largely removes the formation of detrimental excimers/aggregates, and boosts the performance of the corresponding devices with a maximum external quantum efficiency (EQE(max)) up to 40.0% and full width at half maximum (FWHM) of 25 nm, representative of the only example of single OLED that can concurrently achieve narrow bandwidth and high EL efficiency surpassing 40% to date. Even at doping ratio of 30 wt%, the EQE(max) is retained to be 33.3% with nearly unchanged emission spectrum. This work provides a viable approach to realize doping-insensitive MR-TADF devices with extreme EL efficiency and color purity for high-end OLED displays.

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