4.8 Article

Mixed Ionic-Electronic Charge Transport in Layered Black-Phosphorus for Low-Power Memory

Journal

ADVANCED FUNCTIONAL MATERIALS
Volume 32, Issue 10, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202107068

Keywords

2D materials; black-phosphorus; computing; information storage; memory

Funding

  1. Australian Research Council [LE150100001]
  2. Australian Research Council [LE150100001] Funding Source: Australian Research Council

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In 1-2 decades, the availability of computing will be strongly limited by global energy production, as computing currently consumes 4-5% of global electricity supply. This research utilizes a mixed ionic-electronic transport approach with 2D materials (such as BP) to improve the performance of memory devices.
Availability of computing will be strongly limited by global energy production in 1-2 decades. Computing consumes 4-5% of global electricity supply and continues to increase. This is underpinned by memory and switching devices encountering leakage as they are downscaled. Two-dimensional (2D) materials offer a potential solution to the fundamental problem owing to carrier confinement which significantly reduces scattering events. Herein, a mixed ionic-electronic transport is used in layered black phosphorus (BP) based vertically stacked resistance change memories. The memory device relies on a unique interplay between the oxygen and silver ion diffusion through the stack which is generated using a combination of bottom (electrochemically active silver) and top (indium tin oxide) electrodes. The use of a transparent top-electrode enabled for the first time to conduct spectroscopic characterization of the device and experimentally reveal fundamental mechanisms. Endurance of the devices are observed to be >104 switching cycles, with ON/OFF current ratio of >107 and standby power consumption of <5 fW, which effectively suppresses leakage current and sneak paths in a memory array. By undertaking detailed microscopic and spectroscopic investigations, supported by theoretical calculations, this work opens opportunities to enhance resistive switching performances of 2D materials for next-generation information storage and brain-inspired computation.

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