4.8 Article

Tuning Organic Electrochemical Transistor (OECT) Transconductance toward Zero Gate Voltage in the Faradaic Mode

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 42, Pages 50176-50186

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c13009

Keywords

organic electrochemical transistor (OECT); electron transfer; organic semiconducting polymer; faradaic mode; Marcus-Gerischer; density of states (DOS); sensing

Funding

  1. Nano-Bio Materials Consortium (NBMC) [FA8650-18-2-5402]

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This study investigates material design criteria for low-powered/self-powered and efficient organic electrochemical transistors (OECTs) operated in the faradaic mode. By considering the electrochemical processes at both the gate and channel interfaces from a Marcus-Gerischer perspective, the study aims to minimize necessary gate voltage by optimizing the DOS overlap of two redox processes and exploring the doping effect of electrolyte on the polymer. The results provide material design pathways for the development of simple, robust, power-saving, and high-throughput OECT biosensors.
In this work, we investigate material design criteria for low-powered/self-powered and efficient organic electrochemical transistors (OECTs) to be operated in the faradaic mode (detection at the gate electrode occurs via electron transfer events). To rationalize device design principles, we adopt a Marcus-Gerischer perspective for electrochemical processes at both the gate and channel interfaces. This perspective considers density of states (DOS) for the semiconductor channel, the gate electrode, and the electrolyte. We complement our approach with energy band offsets of relevant electrochemical potentials that can be independently measured from transistor geometry using conventional electrochemical methods as well as an approach to measure electrolyte potential in an operating OECT. By systematically changing the relative redox property offsets between the redox-active electrolyte and semiconducting polymer channel, we demonstrate a first-order design principle that necessary gate voltage is minimized by good DOS overlap of the two redox processes at the gate and channel. Specifically, for p-type turn-on OECTs, the voltage-dependent, electrochemically active semiconductor DOS should overlap with the oxidant form of the electrolyte to minimize the onset voltage for transconductance. A special case where the electrolyte can be used to spontaneously dope the polymer via charge transfer is also considered. Collectively, our results provide material design pathways toward the development of simple, robust, power-saving, and high-throughput OECT biosensors.

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