4.8 Article

Selective Growth and Robust Valley Polarization of Bilayer 3R-MoS2

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 48, Pages 57588-57596

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c16889

Keywords

chemical vapor deposition; transition-metal dichalcogenides; valleytronics; 3R-MoS2; intervalley scattering

Funding

  1. National Research Foundation of Korea (NRF) - Korean Government [2017R1D1A1B03035539, 2020R1F1A1069646, 2020R1F1A1048657, 2021R1A2C1004209, 2019R1A2C1085907, 2020R1A5A1016518, 2019R1C1C1003643, 2019R1A6A1A11053838]
  2. National Research Foundation of Korea [2020R1F1A1069646, 2020R1F1A1048657, 2021R1A2C1004209, 2019R1A2C1085907, 2019R1C1C1003643] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Noncentrosymmetric transition-metal dichalcogenides, especially the 3R polymorphs, provide a strong platform for valleytronics. Selective growth of MoS2 monolayers and bilayers from differently oriented substrates in a chemical vapor deposition reactor revealed that the as-grown bilayers are predominantly 3R type, showing significantly higher valley polarization compared to the more common 2H type.
Noncentrosymmetric transition-metal dichalcogenides, particularly their 3R polymorphs, provide a robust setting for valleytronics. Here, we report on the selective growth of monolayers and bilayers of MoS2 , which were acquired from two closely but differently oriented substrates in a chemical vapor deposition reactor. It turns out that as-grown bilayers are predominantly 3R type, not more common 2H-type, as verified by microscopic and spectroscopic characterization. As expected, the 3R bilayer showed a significantly higher valley polarization compared with the centrosymmetric 2H bilayer, which undergoes efficient interlayer scattering across contrasting valleys because of their vertical alignment of the K and K' points in momentum space. Interestingly, the 3R bilayer showed even higher valley polarization compared with the monolayer counterpart. Moreover, the 3R bilayer reasonably maintained its valley efficiency over a very wide range of excitation power density from similar to 0.16 kW/cm(2) to similar to 0.16 MW/cm(2) at both low and room temperatures. These observations are rather surprising because valley dephasing could be more efficient in the bilayer via both interlayer and intralayer scatterings, whereas only intralayer scattering is allowed in the monolayer. The improved valley polarization of the 3R bilayer can be attributed to its indirect-gap nature, where valley-polarized excitons can relax into the valley-insensitive band edge, which otherwise scatter into the contrasting valley to effectively cancel out the initial valley polarization. Our results provide a facile route for the growth of 3R-MoS2 bilayers that could be utilized as a platform for advancing valleytronics.

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