3.8 Article

Theoretical insight of stabilities and optoelectronic features of Ru-based Heusler alloys: Ab-initio calculations

Journal

COMPUTATIONAL CONDENSED MATTER
Volume 28, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.cocom.2021.e00573

Keywords

Ru-based Hensler alloys; DFT calculations; Electronic structures; Optical responses

Funding

  1. DGRSDT, Algeria (The general directorate for scientific research and technological development), under PRFU [B00L02UN220120190002, B00L02UN200120200001]

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In this study, the structural, elastic, electronic, and optical properties of Ru2TiSi and Ru2VAl Heusler alloys compounds were calculated using the pseudopotential scheme within GGA + U approach. The results showed that Ru2TiSi exhibits semiconductor behavior with an indirect band gap, while Ru2VAl compound shows metallic nature. The calculated elastic constants revealed that the compounds are mechanically stable and categorized as anisotropic hard materials.
Herein, the structural, elastic, electronic, and optical properties of Ru2TiSi and Ru2VAl Heusler alloys (HAs) compounds were calculated using the pseudopotential scheme within GGA + U approach. The obtained equilibrium ground states of properties were compared with the available theoretical and experimental results. The calculated elastic constants revealed that the studied compounds were mechanically stable. The elastic moduli were estimated from the Voigt-Reuss-Hill approximations and categorize these compounds as an anisotropic hard materials. The electronic structures divulged that the Ru2TiSi exhibits a semiconductor behavior with an indirect band gap, while Ru2VAl compound shows a metallic nature. Furthermore, the optical responses were calculated and discussed in details.

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