Journal
ACS ENERGY LETTERS
Volume 6, Issue 8, Pages 2697-2703Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.1c01067
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Funding
- National Natural Science Foundation of China [11774134, 51902064]
- special fund for Guangxi Bagui Scholars
- Guangxi HundredTalent Program
- Guangxi Natural Science Foundation [2017GXNSFGA198005]
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The study introduced sodium phosphaethynolate as an alternative, cheap, and low-toxic phosphorus source for the synthesis of highly emitting InP-based quantum dots. The resulting quantum dots exhibit a size-tunable photoluminescence wavelength range and high emission quantum yield. This new phosphorus source demonstrates potential applicability in the preparation of high-quality InP-based quantum dots.
InP-based quantum dots (QDs) have become the most highlighted candidates to be a less-toxic surrogate for Cd- and Pb-based optoelectronic devices. However, the development of InP QDs still lags due to the expensive and flammable phosphorus precursors. Herein, we introduce sodium phosphaethynolate as an alternative, cheap and low-toxic phosphorus source for the synthesis of highly emitting InP-based QDs. The resulting QDs possess a size-tunable photoluminescence wavelength range between 465 and 620 nm and high emission quantum yield between 43 and 97%. The proof-of-concept QD light-emitting diodes applying the InP-based QDs as an emitter layer exhibit a maximum external quantum efficiency of 1.47%, 6.884%, and 13.62% for blue, green, and red devices, respectively. These results prove the applicability and processability of this new phosphorus in the preparation of high-quality InP-based QDs.
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