Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications

Single-shot dynamics of spin–orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions

(2020) Eva Grimaldi et al.   Nature Nanotechnology

Voltage-controlled magnetic anisotropy in an ultrathin Ir-doped Fe layer with a CoFe termination layer

(2020) Takayuki Nozaki et al.   APL Materials

Field-free switching of magnetic tunnel junctions driven by spin–orbit torques at sub-ns timescales

(2020) Viola Krizakova et al.   APPLIED PHYSICS LETTERS

Opportunities and challenges for spintronics in the microelectronics industry

(2020) B. Dieny et al.   Nature Electronics

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

(2019) A. Manchon et al.   REVIEWS OF MODERN PHYSICS

Perpendicular magnetic anisotropy and its electric-field-induced change at metal-dielectric interfaces

(2018) Shinji Miwa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications

(2017) Wang Kang et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory

(2017) Cecile Grezes et al.   IEEE Magnetics Letters

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

(2016) C. Grezes et al.   APPLIED PHYSICS LETTERS

Electric field effect on a double MgO CoFeB-based free layer

(2016) Jiancheng Huang et al.   JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system

(2016) Shunsuke Fukami et al.   NATURE MATERIALS

Emerging Three-Terminal Magnetic Memory Devices

(2016) Seo-Won Lee et al.   PROCEEDINGS OF THE IEEE

Source Line Sensing in Magneto-Electric Random-Access Memory to Reduce Read Disturbance and Improve Sensing Margin

(2016) Hochul Lee et al.   IEEE Magnetics Letters

Underlayer material influence on electric-field controlled perpendicular magnetic anisotropy in CoFeB/MgO magnetic tunnel junctions

(2015) Witold Skowroński et al.   PHYSICAL REVIEW B

Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

(2014) S. Kanai et al.   APPLIED PHYSICS LETTERS

Ultrafast magnetization switching by spin-orbit torques

(2014) Kevin Garello et al.   APPLIED PHYSICS LETTERS

Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

(2014) Luc Thomas et al.   JOURNAL OF APPLIED PHYSICS

Spin-transfer torque generated by a topological insulator

(2014) A. R. Mellnik et al.   NATURE

Magnetization switching through giant spin–orbit torque in a magnetically doped topological insulator heterostructure

(2014) Yabin Fan et al.   NATURE MATERIALS

Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect

(2013) Ki-Seung Lee et al.   APPLIED PHYSICS LETTERS

Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

(2012) S. Kanai et al.   APPLIED PHYSICS LETTERS

Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses

(2011) Yoichi Shiota et al.   NATURE MATERIALS

Single-Shot Time-Resolved Measurements of Nanosecond-Scale Spin-Transfer Induced Switching: Stochastic Versus Deterministic Aspects

(2008) T. Devolder et al.   PHYSICAL REVIEW LETTERS