Article
Chemistry, Physical
Yuanshen Cheng, Shengli Wang, Hongliang Li, Chenwei Wang, Yundian Yang, Shuangshuang Lei, Sen Li
Summary: This study characterized the particle removal efficiency and investigated the mechanism of various cleaning solutions on cobalt surfaces, demonstrating the importance of citric acid and fatty alcohol polyethylene ether in cleaning effects. Additionally, a novel method for wettability characterization was proposed, laying a foundation for characterizing droplet dynamics on solid surfaces in various disciplines.
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
(2021)
Article
Chemistry, Physical
Pengzhan Liu, Seokjun Hong, Sanghuck Jeon, Jaewon Lee, Donggeon Kwak, Yutaka Wada, Hirokuni Hiyama, Satomi Hamada, Taesung Kim
Summary: A new buff cleaning method was developed to remove particles on the Cu surface, with recommendations for using alkaline solution or hot water to increase lifting force. Soft pads and temperature effects were compared for silica and ceria samples. By optimizing the process, almost all particles were removed and scratching was prevented.
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
(2021)
Article
Materials Science, Multidisciplinary
Da Yin, Siyu Tian, Nannan Zhang, Qi Wang, Xiaoqin Sun, Mengrui Liu, Shihao Zhang, Baimei Tan
Summary: The synergistic effect of LABSA and JFCE surfactants in post-CMP cleaning was studied, with the optimal ratio of 2:3 identified. It was found that the composite surfactant is effective in removing particles on copper surfaces, making it suitable for post-CMP cleaning.
MATERIALS CHEMISTRY AND PHYSICS
(2021)
Article
Chemistry, Physical
Shihao Zhang, Yazhen Wang, Baimei Tan, Fangyuan Wang, Xiaolong Wang, Haoyu Du
Summary: This study revealed the effect and mechanism of lysine, serine, and proline on the removal of benzotriazole (BTA) during post-chemical mechanical polishing (CMP) cleaning. Experimental results showed that lysine, serine, and proline enhanced the cleaning efficiency of BTA by 97.1%, 96.7%, and 94.1% respectively, with almost the same concentration. UV-visible absorption spectrum confirmed that lysine had slightly better complexing ability. Molecular dynamics simulations demonstrated that lysine exhibited the lowest adsorption energy of -30.24 eV when absorbed on the Cu (1 1 1) surface.
JOURNAL OF MOLECULAR LIQUIDS
(2023)
Article
Materials Science, Multidisciplinary
Da Yin, Qi Wang, Shihao Zhang, Baimei Tan, Fan Yang, Ru Wang, Xiaoqin Sun, Mengrui Liu
Summary: A new type of alkaline cleaning solution based on EDTA was proposed to remove TAZ contaminants on copper surface effectively, with optimal concentration ratio and pH value explored through experiments and theoretical analysis.
MATERIALS RESEARCH BULLETIN
(2021)
Article
Chemistry, Physical
Samrina Sahir, Nagendra Prasad Yerriboina, So-Young Han, Kwang-Min Han, Tae-Gon Kim, Niraj Mahadev, Jin-Goo Park
Summary: The research found that the removal of ceria particles is more difficult under certain pH conditions, and only specific chemical cleaning methods are effective in removing ceria particles.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Analytical
Liu Yang, Da Yin, Baimei Tan, Wenqian Zhang, Tiecheng Han, Peng Zhao, Tongju Wang, Yawen Liu
Summary: This paper proposes a new alkaline cleaning solution based on a composite complexing agent for the removal of benzotriazole (BTA). The experimental results show that the cleaning solution can effectively remove BTA residue on copper surfaces and achieve a lower surface roughness after cleaning.
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
(2022)
Article
Chemistry, Physical
Wei Li, Baimei Tan, Shihao Zhang, Baohong Gao, Boao Ma, Lei Guo, Haoyu Du, Fangyuan Wang, Xiaolong Wang
Summary: With the continuous miniaturization of semiconductor integrated circuits, the development of chemical mechanical polishing (CMP) technology for copper interconnection has been promoted, and there are more stringent requirements and challenges for post-CMP cleaning technology. A novel and efficient alkaline cleaning solution based on TEAOH, Glu, and PVP is proposed for post-CMP cleaning of copper. The solution effectively removes BTA and achieves a nearly defect-free clean surface.
JOURNAL OF MOLECULAR LIQUIDS
(2023)
Article
Chemistry, Physical
Mei Yan, Baimei Tan, Shihao Zhang, Wei Li, Jinbo Ji, Zhi Liu, Li Huang, Fangyuan Wang, Xiaolong Wang, Haoyu Du
Summary: In this study, the cleaning effect of three complexing agents, glycine, EDTA, and TAD, on ceria particles on the polished silicon dioxide surface were investigated. The results showed that EDTA, at a concentration of 0.15 wt% and pH 11, can remove 99% of ceria particles from the substrate. The proposed removal mechanism involves the undercutting effect of carboxyl functional groups, breaking the Ce-O-Si chemical connection and enhancing the electrostatic repulsion force between the CeO2 and SiO2 substrate.
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
(2023)
Article
Materials Science, Multidisciplinary
Abigail L. Dudek, Kiana A. Cahue, Adam T. Caridi, Tatiana R. Cahue, Jason J. Keleher
Summary: The development of post-CMP cleaning processes is crucial for the miniaturization of IC and logic device architecture. This study focuses on the implementation of Itaconic Acid to enhance the removal of organic residues without compromising SiO2 removal.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
Junghwan Song, Kihong Park, Sanghuck Jeon, Jaewon Lee, Taesung Kim
Summary: A novel post-CMP cleaning solution consisting of TMAH, EDTA, and Disponil was developed to effectively remove residual ceria nanoparticles from polished SiO2 and Si3N4 films. The cleaning solution showed high removal efficiency and better surface quality protection compared to conventional cleaning solutions such as SC1 and SPM.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
Liu Yang, Da Yin, Wenqian Zhang, Tiecheng Han, Peng Zhao, Tongju Wang, Limin Cheng
Summary: Efficient cleaning solution plays an important role in removing contamination after CMP, especially in the removal of colloidal silica particles. The optimized cleaning solution composed of 150 ppm FA/OII, 1500 ppm AEO-15 and 1000 ppm ADS can effectively eliminate residual particles and improve surface quality.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Engineering, Electrical & Electronic
Samrina Sahir, Nagendra Prasad Yerriboina, So-Young Han, Tae-Gon Kim, Niraj Mahadev, Jin-Goo Park
Summary: The removal of ceria during the STI post-CMP cleaning has become a serious concern in the semiconductor industry. Research found that polishing results in more contamination of ceria on oxide surfaces and the strength of adhesion increases as ceria particle size decreases, with different cleaning methods needed based on the size of the ceria particles.
MICROELECTRONIC ENGINEERING
(2021)
Article
Materials Science, Multidisciplinary
Chi-Hsiang Hsieh, Ming-Hsun Lee, Chao-Chang A. Chen, Chang-Ching Tu, Hao-Chung Kuo
Summary: This article investigates methods for reducing metal contamination and surface particle contamination on SiC substrates. It was found that different commercial CMP slurries can result in different contamination levels, and adding a scrubber cleaning step before the traditional cleaning process can significantly reduce contamination.
MATERIALS RESEARCH EXPRESS
(2023)
Article
Engineering, Electrical & Electronic
Hong Jin Kim, Mark Rovereto
Summary: This paper investigates the generation of defects during the in-situ cleaning process of copper CMP, with a focus on cross contamination by the brush cleaning process. The experimental results underscore the critical role of surface charge variation during the brush cleaning process in defect generation.
MICROELECTRONIC ENGINEERING
(2022)
Article
Chemistry, Physical
Baohong Gao, Baimei Tan, Yuling Liu, Chenwei Wang, Yangang He, Yanyan Huang
SURFACE AND INTERFACE ANALYSIS
(2019)
Article
Materials Science, Multidisciplinary
Jing Wang, Baohong Gao, Nannan Zhang, Han Yan
Summary: This study investigates the removal of benzotriazole (BTA), a common corrosion inhibitor in the chemical mechanical polishing (CMP) process. N,N'-bis(3-aminopropyl)-1,2-ethanediamine (TAD) and pyrazole (PZ) are used as the main components in an alkaline cleaning solution, with fatty alcohol polyoxy ethylene ether (JFCE) as an auxiliary surfactant. The optimized cleaning solution shows good performance in removing BTA, as verified by contact angle measurements, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM).
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2023)
