4.7 Article

Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

Journal

NPG ASIA MATERIALS
Volume 13, Issue 1, Pages -

Publisher

NATURE RESEARCH
DOI: 10.1038/s41427-021-00314-y

Keywords

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Funding

  1. National Research Foundation of Korea [2021R1A2B5B02002167, 2021M3H4A1A02056037, 2021M3F3A2A03017873]
  2. Basic Science Research Program through the National Research Foundation of Korea - Ministry of Science, ICT & Future Planning [2020R1A2C2010984]
  3. National Research Foundation of Korea [2021R1A2B5B02002167, 2021M3H4A1A02056037, 2021M3F3A2A03017873] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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This study presents a unique low-temperature-processed method for synthesizing tellurium nanowire networks (Te-nanonets) to fabricate high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. The FETs achieved a maximum mobility of 4.7 cm(2)/Vs, an on/off current ratio of 1 x 10(4), and a maximum transconductance of 2.18 mu S. Additionally, the electrical performance of a Te-nanonet-based transistor array of 42 devices was measured, showing stable and uniform results, while optical measurements demonstrated exceptionally uniform optical performance over a wide spectral range.
Low-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high- performance large-area p-type fieldeffect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm(2)/Vs, an on/off current ratio of 1 x 10(4), and a maximum transconductance of 2.18 mu S are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Tenanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

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