Strong cube-textured titanium nitride conductive films directly on flexible metal substrate

Single crystal-like titanium nitride (TiN) by ion beam assisted deposition (IBAD) method is a potential conductive and thermally-stable template for growing highly-oriented REBa2Cu3O7-x (RE = rare earth) superconductor tapes as well as optoelectronics on flexible metal substrates. Previously, amorphous seed layers such as Al2O3 and Y2O3 were necessary for the biaxially-textured film growth by IBAD. Such nonconductive seed layers prevent an electrically-conductive path between functional film and bottom metal substrate such as flexible, electropolished Hastelloy (EPH). An approach of Argon ion (Ar+) pre-treatment of EPH surface, followed by roll-to-roll IBAD process has been developed for a simplified architecture of cube-textured TiN directly on flexible metal substrate. Strong cube-textured TiN films with out-of-plane texture spread of 1.8 degrees and in-plane texture spread of 5.6 degrees were obtained by IBAD technique on flexible Hastelloy substrate without any intervening layers; this provides a conductive template for functional layers. Also, the ion pretreatment step is easily achieved in an IBAD system which simplifies the fabrication process.

Automated summary

The IBAD method for producing single-crystal-like titanium nitride (TiN) simplifies the process of growing functional layers on flexible metal substrates, with the use of argon ion pre-treatment allowing for the direct formation of cube-oriented TiN without intervening layers. Strongly textured TiN films with low out-of-plane and in-plane texture spread were achieved, providing a conductive template for functional layers.