Doping effect on nanoscopic and macroscopic electrical properties of Barium Zirconate Titanate thin films

Lead-free Barium Zirconate Titanate thin films synthesized by sol-gel process were deposited on platinized silicon substrates. Atomic and piezoresponse force microscopies analysis have revealed low values for the surface roughness and local piezoelectric loops, respectively. Nanoscopic piezoelectric and ferroelectric properties decrease with zirconium content increasing. Dielectric measurements were made up to 1 MHz at room temperature. The highest dielectric permittivity and tunability are obtained for 10% of zirconium. Dielectric loss tangent decreases with frequency, zirconium content and electric field increasing. Thin films with 20% of zirconium could be particularly interesting for electronic applications.

Automated summary

Lead-free Barium Zirconate Titanate thin films synthesized by sol-gel process were deposited on platinized silicon substrates. Analysis using atomic and piezoresponse force microscopies showed low surface roughness and local piezoelectric loops. Properties at nanoscale decrease with increasing zirconium content, while the highest dielectric permittivity and tunability are achieved at 10% zirconium. Thin films with 20% zirconium content may be particularly interesting for electronic applications.