Performance analysis and yield estimation for a negative capacitance field effect transistor-based eight-transistor static random access memory

The read/write performance and yield of a negative capacitance field effect transistor (NCFET)-based eight-transistor (8-T) static random access memory (SRAM) are quantitatively evaluated and then compared with a conventional 8-T SRAM. The performance of the 8-T SRAM cell is analyzed by read/write metrics (i.e. read static noise margin, write-ability current and read 'zero (0)' current). The sensitivity of the 8-T SRAM cell to the read/write metric is estimated by quantitatively evaluating the impact of systematic variation (i.e. channel width, length and threshold voltage variation). Based on variation-aware sensitivity analysis, quantitative yield estimation is done using the 'cell sigma' concept. Finally, the minimum power supply voltage (V (DD)) (which satisfies six cell sigma for yield estimation of a NCFET-based/baseline 8-T SRAM cell) is quantitatively estimated.

Automated summary

The study quantitatively evaluates the read/write performance and yield of an 8-T SRAM using NCFET, comparing it with a conventional 8-T SRAM. The sensitivity of the 8-T SRAM cell to read/write metrics is estimated by quantitatively evaluating the impact of systematic variations, and quantitative yield estimation is done using the 'cell sigma' concept. Finally, the minimum power supply voltage (V (DD)) for yield estimation of the NCFET-based/baseline 8-T SRAM cell is quantitatively estimated.