Journal
NEW JOURNAL OF PHYSICS
Volume 23, Issue 10, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1367-2630/ac291f
Keywords
colour centres; spin-photon interfaces; silicon photonics; silicon spin qubits
Categories
Funding
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Canada Research Chairs program (CRC)
- Canada Foundation for Innovation (CFI)
- BC. Knowledge Development Fund (BCKDF)
- Canadian Institute for Advanced Research (CIFAR) Quantum Information Science program
- CIFAR Catalyst Fund
- Le Fonds de recherche du Quebec-Nature et technologies (FRQNT)
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This study focuses on the T radiation damage centers in silicon and successfully fabricates high concentration T center ensembles in the 220 nm device layer of silicon-on-insulator wafers. A method using spin-dependent optical transitions is developed to benchmark the characteristic optical spectral diffusion within these T center ensembles. The research shows that with minimal optimization, high densities of implanted T centers localized near the interface display characteristic levels of total spectral diffusion.
Global quantum networks will benefit from the reliable fabrication and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O-band optical transition near 1326 nm and long-lived electron and nuclear spin lifetimes. To date, these defect centres have only been studied as ensembles in bulk silicon. Here, we fabricate high concentration T centre ensembles in the 220 nm device layer of silicon-on-insulator wafers by ion implantation and subsequent annealing. We then develop a method that uses spin-dependent optical transitions to benchmark the characteristic optical spectral diffusion within these T centre ensembles. Using this new technique, we show that with minimal optimization to the fabrication process high densities of implanted T centres localized less than or similar to 100 nm from an interface display similar to 1 GHz characteristic levels of total spectral diffusion.
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