Hf0.5Zr0.5O₂-Based Ferroelectric Field-Effect Transistors With HfO₂ Seed Layers for Radiation-Hard Nonvolatile Memory Applications

Authors

Keywords

Journal

Volume 68, Issue 9, Pages 4368-4372

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2021-07-14

DOI

10.1109/ted.2021.3095036

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