First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM

Published 2021 View Full Article

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Title
First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 6, Pages 2680-2685
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-05-04
DOI
10.1109/ted.2021.3074103

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