Article
Nanoscience & Nanotechnology
Xu-Qian Zheng, Troy Tharpe, S. M. Enamul Hoque Yousuf, Nicholas G. Rudawski, Philip X. -L. Feng, Roozbeh Tabrizian
Summary: This study investigates the achievement of high quality factors in Hf0.5Zr0.5O2 nanoelectromechanical resonators by incorporating Al2O3 interlayers. The results show Q factors up to 171,000 and frequency-quality factor products exceeding 1011 Hz. Clamping loss and surface loss are identified as the limiting dissipation sources.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Troy Tharpe, Xu-Qian Zheng, Philip X-L Feng, Roozbeh Tabrizian
Summary: The nanoresonator-based approach in free-standing ferroelectric Hf0.5Zr0.5O2 films allows for simultaneous extraction of Young's modulus and residual stress, and demonstrates the closest match with theoretical calculations for orthorhombic Hf0.5Zr0.5O2.
ADVANCED ENGINEERING MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Motoaki Hara, Yuichiro Yano, Yuki Takahashi, Toshio Nishizawa, Shinsuke Hara, Akifumi Kasamatsu, Masanori Ueda, Hiroyuki Ito, Tetsuya Ido
Summary: An injection-locked divider oscillator was developed to convert a 6 GHz signal into a 3 GHz signal, utilizing a thin-film bulk acoustic resonator instead of a conventional LC tank circuit to achieve high frequency stability and low power consumption. The oscillator operated with a power consumption of 4.5 nW, a maximum lock range of 1.5% in fractional frequency, and exhibited bifurcation of the lock range width when sweeping the injection power of the 6 GHz signal.
ELECTRONICS LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Wentong Dou, Congquan Zhou, Ruidong Qin, Yumeng Yang, Huihui Guo, Zhiqiang Mu, Wenjie Yu
Summary: This study designed and fabricated BAW resonators based on highly doped Al1-xScxN piezoelectric film, and conducted detailed testing and analysis on the device. The results showed that the device has potential for high-frequency and large bandwidth applications, with a large electromechanical coupling and reasonable temperature stability.
Article
Engineering, Electrical & Electronic
Wenhao Peng, Milad Zolfagharloo Koohi, Suhyun Nam, Amir Mortazawi
Summary: A nonlinear circuit model has been developed to simulate electrostriction in thin-film ferroelectric bulk acoustic wave resonators, based on nonlinear coupling relations derived from the Landau-Devonshire theory. The improved approximation procedure allows accurate simulation results with reduced circuit model complexity. The response from simulation is compared with measurement results for a barium strontium titanate thin-film bulk acoustic resonator at different dc bias levels.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
(2022)
Article
Chemistry, Physical
Yu-Chen Chang, Ying-Chung Chen, Chien-Chuan Cheng
Summary: AlGaN thin films were utilized as piezoelectric layers to produce solidly mounted resonators for high frequency acoustic wave devices. The optimized deposition parameters of AlGaN film resulted in a smooth surface, uniform crystal grains, and strong c-axis orientation, with Al and Ga contents of 81% and 19% respectively. The obtained SMR device showed desirable characteristics such as a center frequency of 3.60 GHz, a quality factor value of 96.93, and a figure of merit value of 2.26, making it suitable for high frequency applications.
Article
Computer Science, Information Systems
Qinghua Yang, Yao Xu, Yongle Wu, Weimin Wang, Zhiguo Lai
Summary: This paper designs and fabricates a high-selectivity film bulk acoustic resonator (FBAR) filter chip for the 3.4-3.6 GHz range. The experimental results show that the filter chip has high roll-off and stopband suppression, with most of the stopband suppression better than 35 dB. Error analysis and parameter modification were conducted for future filter design work.
Article
Engineering, Electrical & Electronic
Alireza Kashir, Hyungwoo Kim, Seungyeol Oh, Hyunsang Hwang
Summary: By tuning the ozone pulse duration, annealing process, and metal/insulator interface, a wake-up free Hf0.5Zr0.5O2 (HZO) ferroelectric film with the highest remnant polarization value was achieved. The use of a tungsten capping electrode and insertion of a Pt layer between the interfaces helped reduce leakage current while maintaining the 2Pr value constant.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
Troy Tharpe, Faysal Hakim, Roozbeh Tabrizian
Summary: This study reports the use of thickness-scalable nano-laminated Hf0.5Zr0.5O2 films to achieve high quality factor BAW resonators, demonstrating improved resonator performance and power handling capabilities while maintaining ferroelectric and piezoelectric properties. Various resonator prototypes with lithographically scaled frequencies were implemented, showing resonance frequencies ranging from 108 to 691 MHz, mechanical Qs exceeding 500, and f(res) x Q products up to 1.84x 10(11).
2021 21ST INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS)
(2021)
Article
Crystallography
Wen-Qi Zhang, Po-Tang Wu, Yu-Heng Lin, Yi-Lin Yang
Summary: In this study, a facilitated ferroelectric high-k/metal-gate n-type FinFET based on Hf0.5Zr0.5O2 was developed. The impact of hysteresis effect on device characteristics of various fin-widths and the degradation induced by stress on the ferroelectric FinFET (Fe-FinFET) were investigated. Electrical characteristics of the device were clarified and related reliability inspections were conducted. Hysteresis degradation is caused by a shift in polarization of the gate ferroelectric film and generation of interface traps after high-energy carrier stress.
Article
Physics, Applied
Zhiwei Wen, Wenjuan Liu, Tiancheng Luo, Xin Tong, Ying Xie, Xiyu Gu, Yan Liu, Yao Cai, Shishang Guo, Jian Wang, Chengliang Sun
Summary: This letter introduces a new type of laterally excited bulk acoustic resonator (XBAR) called SV-BAR, which suppresses higher-order spurious modes effectively by changing the scattering vias in the electrodes. The SV-BAR achieves 50Ω impedance matching and exhibits impressive performance parameters, making it a promising solution for high-performance radio frequency filters in 5G communication.
APPLIED PHYSICS LETTERS
(2023)
Article
Computer Science, Information Systems
Yaxin Wang, Yang Zou, Chao Gao, Xiyu Gu, Ye Ma, Yan Liu, Wenjuan Liu, Jeffrey Bo Woon Soon, Yao Cai, Chengliang Sun
Summary: Film bulk acoustic resonators (FBARs) based on aluminum nitride (AlN) and scandium-doped aluminum nitride (AlScN) show potential in the radio frequency front-end. This study demonstrates the feasibility of adjusting the resonant frequency of FBAR using external direct current electric bias, offering possibilities for frequency-tunable resonators.
Article
Engineering, Electrical & Electronic
Minghao Shao, Tianqi Lu, Zhibo Wang, Houfang Liu, Ruiting Zhao, Xiao Liu, Xiaoyue Zhao, Renrong Liang, Yi Yang, Tian-Ling Ren
Summary: The study focuses on the dielectric properties and interface parameters of ferroelectric hafnium zirconium oxide thin films, examining their effects on dynamic, piezoelectric, and electrostrictive behaviors. Analysis using an impedance model with constant phase element (CPE) was conducted to determine the influence of the interface on the dielectric properties, with dielectric spectra at elevated temperatures used for verification.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2021)
Article
Acoustics
Lejun Hu, Charles Thompson, Grace Remillard, Kavitha Chandra
Summary: This work analyzes and models the physical processes behind a passive acoustic transducer that derives power from an externally applied electromagnetic field, encoded in the backscattered electromagnetic field. Analogies in electro-mechano-acoustical processes are developed. Power generation, sound transduction, and radio frequency backscatter transmission of the audio signal are discussed, with resonant frequency comparable to literature reports.
JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA
(2021)
Article
Engineering, Civil
Viktor Lidstrom
Summary: This study investigates a method that uses M-ary permutation frequency-shift keying (SPFSK) alphabets as the symbol space for robust data transmission in underwater acoustic channels. The use of polar coding and time/frequency guards improves receiver statistics. Simulation results show that increasing the alphabet size enhances receiver performance. The method also performs well in watermark benchmark testing.
IEEE JOURNAL OF OCEANIC ENGINEERING
(2023)
Article
Physics, Applied
F. Hakim, M. Ghatge, R. Tabrizian
APPLIED PHYSICS LETTERS
(2020)
Article
Acoustics
Mehrdad Ramezani, Valeriy V. Felmetsger, Nicholas G. Rudawski, Roozbeh Tabrizian
Summary: A fabrication process has been developed to grow high-quality aluminum nitride films on the sidewall of silicon microfins to create FinBARs, allowing for integration of high-Q resonators and low-loss filters on small chips. This technology paves the way for the realization of multifrequency and multiband FinBAR spectral processors.
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
(2021)
Article
Materials Science, Multidisciplinary
Sushant Rassay, Faysal Hakim, Chao Li, Christian Forgey, Nitin Choudhary, Roozbeh Tabrizian
Summary: This study presents a reactive magnetron sputtering process for the fabrication of scandium aluminum nitride (ScxAl1-xN) films, allowing fine control over film thickness, composition, and stress. The results demonstrate consistent crystallinity and ferroelectric properties even with extreme thickness miniaturization to sub-50 nm, showing a significant dependence of the coercive field on residual stress and scandium concentration.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Troy Tharpe, Xu-Qian Zheng, Philip X-L Feng, Roozbeh Tabrizian
Summary: The nanoresonator-based approach in free-standing ferroelectric Hf0.5Zr0.5O2 films allows for simultaneous extraction of Young's modulus and residual stress, and demonstrates the closest match with theoretical calculations for orthorhombic Hf0.5Zr0.5O2.
ADVANCED ENGINEERING MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Xu-Qian Zheng, Troy Tharpe, S. M. Enamul Hoque Yousuf, Nicholas G. Rudawski, Philip X. -L. Feng, Roozbeh Tabrizian
Summary: This study investigates the achievement of high quality factors in Hf0.5Zr0.5O2 nanoelectromechanical resonators by incorporating Al2O3 interlayers. The results show Q factors up to 171,000 and frequency-quality factor products exceeding 1011 Hz. Clamping loss and surface loss are identified as the limiting dissipation sources.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Dicheng Mo, Shaurya Dabas, Sushant Rassay, Roozbeh Tabrizian
Summary: This article presents a bulk acoustic wave (BAW) resonator with complementary switchable operation in the first and second thickness extensional modes. By utilizing a laminated structure and the polarization tunability of ferroelectric layers, the resonator achieves switchability in TE1 and TE2 modes. The resonator exhibits high electromechanical coupling coefficients, quality factors, and repeatable operation.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Materials Science, Multidisciplinary
Dicheng Mo, Sushant Rassay, Chao Li, Roozbeh Tabrizian
Summary: In this study, a dual-band scandium-aluminum nitride Lamb-wave bandpass filter was developed with intrinsically configurable center frequencies at 628 MHz and 1.07 GHz. The filter utilized electrical coupling of dual-mode resonators with complementary-switchable operation states defined by spatial polarization tuning. The results demonstrated that the filter had wide bandwidths, low insertion losses, and good on-off switching isolations.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Troy Tharpe, Eitan Hershkovitz, Faysal Hakim, Honggyu Kim, Roozbeh Tabrizian
Summary: This article reports on switchable nanoelectromechanical system resonators based on Hf0.5Zr0.5O2-Al2O3 superlattice transducers, which provide wide spectrum coverage. These resonators offer frequencies ranging from 0.4 to 17.3 GHz, frequency-quality products up to 4.04 x 10(12) Hz, and an on/off isolation of 37 dB.
NATURE ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Sushant Rassay, Dicheng Mo, Chao Li, Nitin Choudhary, Christian Forgey, Roozbeh Tabrizian
Summary: In this study, switchable ultra- and super-high-frequency Lamb-mode resonators were developed using ferroelectricity in scandium aluminum nitride films. The resonators demonstrated high frequencies, frequency x quality factor product, and electromechanical coupling factor x quality factor product. The intrinsic switchability of the resonators was characterized using monopolar pulses, showing high admittance switching isolation.
IEEE ELECTRON DEVICE LETTERS
(2021)
