Observation and manipulation of valley polarization in two-dimensional H-Tl2O/CrI3 heterostructure

We report the two-dimensional H-Tl2O/CrI3 van der Waals (vdW) heterostructure as a promising valleytronic material and investigate its valley polarization and valley spin splitting manipulation using first-principles calculations. The H-Tl2O/CrI3 heterostructure displays valley polarization both in the conduction and valence band at two valleys. Particularly, valley polarization can attain 14.95 meV at the conduction band. In addition, a large valley spin splitting of 0.57 (0.58) eV at the K (K') point is shown in the conduction band. With the manipulation of the interlayer spacing and in-plane biaxial strain, the valley polarization and valley spin splitting of the HTl2O/CrI3 heterostructure follow the short-range effects of interfacial orbital hybridization, thus a nearly linear relationship is shown. Our work provides not only application prospects of the H-Tl2O/CrI3 heterostructure nanodevices but also theoretical effective support for research and development of valleytronics.

Automated summary

The study reports the two-dimensional H-Tl2O/CrI3 van der Waals heterostructure as a promising valleytronic material and investigates its valley polarization and valley spin splitting manipulation through first-principles calculations. Experimental results show that valley polarization can reach 14.95 meV in the conduction band, with a large valley spin splitting of 0.57 (0.58) eV at the K (K') point. Manipulation of interlayer spacing and in-plane biaxial strain shows a nearly linear relationship in the valley polarization and valley spin splitting of the HTl2O/CrI3 heterostructure.