4.6 Article

Quantum efficiency and oscillator strength of InGaAs quantum dots for single-photon sources emitting in the telecommunication O-band

Journal

APPLIED PHYSICS LETTERS
Volume 119, Issue 6, Pages -

Publisher

AIP Publishing
DOI: 10.1063/5.0059458

Keywords

-

Funding

  1. FI-SEQUR project - European Regional Development Fund (EFRE) of the European Union [2/POLBER-2/2016]
  2. German Research Foundation [CRC 787]
  3. Volkswagen Foundation via project NeuroQNet
  4. Polish Ministry of Science and Higher Education within the Mobilnosc Plus-Vedycja program
  5. Polish National Agency for Academic Exchange (NAWA) [PPI/APM/2018/1/00031/U/001]
  6. German Federal Ministry of Education and Research (BMBF) via the project QuSecure [13N14876]
  7. [Re2974/24-1]

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Experimental results demonstrate that InGaAs quantum dots can be utilized for manufacturing single-photon sources emitting in the telecom O-Band. The oscillator strength and internal quantum efficiency are evaluated by determining the radiative and non-radiative decay rates under the variation of the optical density of states at the position of the quantum dots emitting at wavelengths below 1 µm.
We demonstrate experimental results based on time-resolved photoluminescence spectroscopy to determine the oscillator strength and the internal quantum efficiency (IQE) of InGaAs quantum dots (QDs). Using a strain-reducing layer, these QDs can be employed for the manufacturing of single-photon sources emitting in the telecom O-Band. The oscillator strength and IQE are evaluated by determining the radiative and non-radiative decay rates under the variation of the optical density of states at the position of the QD for InGaAs QDs emitting at wavelengths below 1 mu m. For this purpose, we perform measurements on a QD sample for different thicknesses of the capping layer realized by a controlled wet-chemical etching process. From numeric modeling of the radiative and non-radiative decay rates dependence on the capping layer thickness, we determine an oscillator strength of 24.6 +/- 3.2 and a high IQE of (85 +/- 10)% for the long-wavelength InGaAs QDs.

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