Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 31, Issue 49, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202106105
Keywords
junction field-effect transistors; photodetectors; tunable optoelectronics; two-dimensional materials; van der Waals heterostructures
Categories
Funding
- National Natural Science Foundation of China [51802103, 21825103]
- Hubei Provincial Natural Science Foundation of China [2019CFA002]
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The novel junction field-effect transistor (JFET) photodetector achieved high responsivity and detectivity through dual-gate modulation, attributing its high performance to effective suppression of dark current and enhancement of photocurrent via modulation of the depletion region.
2D materials have shown great promise for next-generation high-performance photodetectors. However, the performance of photodetectors based on 2D materials is generally limited by the tradeoff between photoresponsivity and photodetectivity. Here, a novel junction field-effect transistor (JFET) photodetector consisting of a PdSe2 gate and MoS2 channel is constructed to realize high responsivity and high detectivity through effective modulation of top junction gate and back gate. The JFET exhibits high carrier mobility of 213 cm(2) V-1 s(-1). What is more, the high responsivity of 6 x 10(2) A W-1, as well as the high detectivity of 10(11) Jones, are achieved simultaneously through the dual-gate modulation. The high performance is attributed to the modulation of the depletion region by the dual-gate, which can effectively suppress the dark current and enhance the photocurrent, thereby realizing high detectivity and responsivity. The JFET photodetector provides a new approach to realize photodetectors with high responsivity and detectivity.
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