Article
Chemistry, Multidisciplinary
Woong Huh, Donghun Lee, Seonghoon Jang, Jung Hoon Kang, Tae Hyun Yoon, Jae-Pil So, Yeon Ho Kim, Jong Chan Kim, Hong-Gyu Park, Hu Young Jeong, Gunuk Wang, Chul-Ho Lee
Summary: A three-terminal heterosynaptic memtransistor using an intentional-defect-generated molybdenum disulfide channel is presented in this study, which can mimic the synaptic modulation characteristics and achieve energy-efficient biological neural processing. The device exhibits memristive switching between the source and drain terminals mediated by defect-induced space-charge-limited conduction in an ultrathin channel, which is further modulated by the gate terminal according to the gate-tuned filling of trap states. Controlled by sub-femtojoule impulses from both the source and gate terminals, this device acts as an artificial synapse consuming lower energy than its biological counterpart. Electrostatic gate modulation, equivalent to biological neuromodulation, additionally regulates the dynamic range and tuning rate of synaptic weight, independent of the programming impulses. This heterosynaptic modulation improves learning accuracy, efficiency, and pattern recognition energy consumption reduction, offering a new path towards highly networked and energy-efficient neuromorphic electronics.
ADVANCED MATERIALS
(2023)
Review
Chemistry, Multidisciplinary
Guiming Cao, Peng Meng, Jiangang Chen, Haishi Liu, Renji Bian, Chao Zhu, Fucai Liu, Zheng Liu
Summary: This article provides a comprehensive review of synaptic devices based on 2D materials, including their advantages, challenges, and future development strategies.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Fei Xue, Xin He, Zhenyu Wang, Jose Ramon Duran Retamal, Zheng Chai, Lingling Jing, Chenhui Zhang, Hui Fang, Yang Chai, Tao Jiang, Weidong Zhang, Husam N. Alshareef, Zhigang Ji, Lain-Jong Li, Jr-Hau He, Xixiang Zhang
Summary: Van der Waals ferroelectric alpha-In2Se3 has demonstrated successful implementation of heterosynaptic plasticity and achieved high resistance switching ratio in memristors for associative heterosynaptic learning. This material has potential applications in energy-efficient computing systems and logic-in-memory computers.
ADVANCED MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Haena Yim, Chansoo Yoon, Ahrom Ryu, So Yeon Yoo, Ju Young Kwon, Gwangtaek Oh, Sohwi Kim, Eun Hee Kee, Keun Hwa Chae, Jung Ho Yoon, Bae Ho Park, Ji-Won Choi
Summary: Vertical two-terminal synaptic devices based on resistive switching have the potential to emulate biological signal processing and implement artificial intelligence learning circuitries. To mimic heterosynaptic behaviors, an additional terminal for neuromodulator activity is required, but adding an extra terminal may lead to low scalability. In this study, a vertical two-terminal Pt/bilayer SANO nanosheet/Nb:STO device emulates heterosynaptic plasticity by controlling trap sites in the SANO nanosheet via modulation of the tunneling current. Similar to biological neuromodulation, the device can modulate synaptic plasticity, pulsed pair facilitation, and cutoff frequency, adding high-level learning to a neuromorphic system with a simple cross-bar array structure.
Review
Chemistry, Multidisciplinary
Yilin Sun, Yingtao Ding, Dan Xie
Summary: Neuromorphic devices provide a new way to overcome the von Neumann bottleneck, optoelectronic synaptic devices have potential to break the limitations of electrically stimulated synapse, and low-dimensional materials show excellent properties in building vdW heterostructures.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Hye Yeon Jang, Ojun Kwon, Jae Hyeon Nam, Jung-Dae Kwon, Yonghun Kim, Woojin Park, Byungjin Cho
Summary: In this study, reliable heterosynaptic characteristics were achieved using a memtransistor device with a MoS2/ZrO2-x heterostructure. By inserting an insulating ZrO2-x layer below the MoS2, the Schottky barrier height was effectively modulated, allowing for dual-terminal stimulated multilevel conductance. The device also exhibited long-term potentiation/depression cycling and stable pulse cycling behavior.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Neurosciences
Gianluca Susi, Luis F. Anton-Toro, Fernando Maestu, Ernesto Pereda, Claudio Mirasso
Summary: The study introduces the nMNSD structure as a generalization of MNSD, expanding the number of applicable inputs; analyzing its recognition mechanism using the trapezoid method, showcasing performance advantages in classification tasks.
FRONTIERS IN NEUROSCIENCE
(2021)
Article
Chemistry, Multidisciplinary
Yongbiao Zhai, Peng Xie, Zihao Feng, Chunyu Du, Su-Ting Han, Ye Zhou
Summary: The authors demonstrate a perfect implementation of the BCM learning rule based on a 2D heterostructure memristor in this study. Memtransistors provide gate-tunable freedom degree to modulate the forgetting rate, which helps to perfectly present the critical characteristics of the BCM rule.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Jing-Kai Qin, Bing-Xuan Zhu, Cong Wang, Cheng-Yi Zhu, Ruo-Yao Sun, Liang Zhen, Yang Chai, Cheng-Yan Xu
Summary: This study reports a planar synaptic device based on LixMoO3, which can achieve high heterosynaptic plasticity for information processing. The device demonstrates excellent performance in nonvolatile memory and Boolean logic operations. The anisotropic in-plane ionic migration mechanism in LixMoO3 is revealed through experimental and theoretical studies, providing an important simulation tool for neurobiological architecture.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Fengben Xi, Andreas Grenmyr, Jiayuan Zhang, Yi Han, Jin Hee Bae, Detlev Grutzmacher, Qing-Tai Zhao
Summary: Neuromorphic computing employs artificial synapses to transfer information between neurons. Conventional artificial synapses with homosynaptic plasticity face positive feedback loop problem, requiring synapses with heterosynaptic plasticity. This study presents complementary metal-oxide-semiconductor compatible artificial synapses based on FEMOD on silicon, allowing heterosynaptic plasticity with multi-functionalities, high endurance, low power consumption, and high speed. The proposed device structure performs multi-functions of biological synapse and Boolean logic, providing high potential for future large scale and low power neuromorphic computing applications.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Heejeong Park, Seyoung Oh, Soo-Hong Jeong, Ojun Kwon, Hyun Young Seo, Jung-Dae Kwon, Yonghun Kim, Woojin Park, Byungjin Cho
Summary: This study demonstrates the reliable gate-tunable resistive switching characteristics of an IGZO memtransistor and its potential for precise control of heterosynaptic plasticity and multilevel states. It also shows remarkable endurance in long-term potentiation and depression cycling. The high pattern recognition accuracies obtained from artificial neural network simulation further validate its performance.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Neurosciences
Laxmi R. Iyer, Yansong Chua, Haizhou Li
Summary: The study evaluated the ability of spiking neural networks (SNNs) to utilize spike timings in calculations. Different datasets have varying effects on the classification ability of SNNs, with results showing that the N-MNIST dataset could not effectively evaluate the SNN's ability to classify temporal data.
FRONTIERS IN NEUROSCIENCE
(2021)
Article
Engineering, Biomedical
Junqin Li, Wenhua Yi, Yuze Luo, Ke Yang, Lidan He, Caiyun Xu, Le Deng, Dinggeng He
Summary: A versatile hybrid nanozyme (MoS2/CuO2) was constructed by decorating ultrasmall CuO2 nanodots onto lamellar MoS2 platelets, which can enhance chemodynamic therapy (CDT) by regulating local microenvironments and providing photonic hyperthermia (PTT). The MoS2 support promotes the conversion of Cu2 + to Cu+ and enhances the peroxidase-mimic activity. The developed MoS2/CuO2 exhibits desirable PTT/CDT dual-mode antibacterial efficacy both in vitro and in vivo.
ACTA BIOMATERIALIA
(2023)
Article
Materials Science, Multidisciplinary
Yong Zhang, Jian Yao, Zhen Zhang, Rong Zhang, Li Li, Yu Teng, Zongjie Shen, Lixing Kang, Limin Wu, Xiaosheng Fang
Summary: We report high-performance two-dimensional perovskite Pb 2 Nb 3 O 10 photodetectors (PNO PDs) for the first time. Few-layer PNO nanosheets were successfully obtained through a simple calcination and liquid exfoliation method. Individual PNO nanosheet devices with various structures (Au-PNOAu, Au-PNO-Ti, Ti-PNO-Ti) were fabricated and investigated. The Au-PNO-Ti device exhibited a high rectification factor and excellent self-powered performance.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2023)
Article
Materials Science, Multidisciplinary
Yihan Wu, Wenshan Yu, Shengping Shen
Summary: In this paper, a supervised machine learning framework powered by the distributed breeder genetic algorithm (DBGA) is proposed to train a charge transfer ionic potential (CTIP) for the multi-component Hf/Nb/Ta/Ti/Zr/O system. The developed potential is rigorously validated and used to study the atomic structure and its evolution in RHEA. The simulation results provide valuable atomistic information and display promising prospects for large-scale reactive simulations.
MATERIALS & DESIGN
(2023)
Article
Nanoscience & Nanotechnology
Seyoung Oh, Seung Won Lee, Dongjun Kim, Jeong-Hun Choi, Hong-Chul Chae, Sung Mook Choi, Ji-Hoon Ahn, Byungjin Cho
JOURNAL OF NANOMATERIALS
(2018)
Article
Nanoscience & Nanotechnology
Woojin Park, Tae Hyeon Kim, Jae Hyeon Nam, Hye Yeon Jang, Yusin Pak, Jung-Wook Min, Joho Yun, Byungjin Cho
Article
Nanoscience & Nanotechnology
Esther Lee, Tae Hyeon Kim, Seung Won Lee, Jee Hoon Kim, Jaeun Kim, Tae Gun Jeong, Ji-Hoon Ahn, Byungjin Cho
Article
Chemistry, Multidisciplinary
Woojin Park, Yusin Pak, Hye Yeon Jang, Jae Hyeon Nam, Tae Hyeon Kim, Seyoung Oh, Sung Mook Choi, Yonghun Kim, Byungjin Cho
Article
Nanoscience & Nanotechnology
Hye Yeon Jang, Jae Hyeon Nam, Jongwon Yoon, Yonghun Kim, Woojin Park, Byungjin Cho
Article
Chemistry, Physical
Tae Hyeon Kim, Hee Tae Lee, Young-Min Kang, Gun-Eik Jang, In Hoi Kwon, Byungjin Cho
Article
Chemistry, Multidisciplinary
Woojin Park, Hye Yeon Jang, Jae Hyeon Nam, Jung-Dae Kwon, Byungjin Cho, Yonghun Kim
Editorial Material
Chemistry, Multidisciplinary
Byungjin Cho, Yonghun Kim
Article
Crystallography
Ojun Kwon, Kyoungah Kim, Shi-Gwan Woo, Gun-Eik Jang, Byungjin Cho
Article
Nanoscience & Nanotechnology
M. Lee, W. Park, H. Son, J. Seo, O. Kwon, S. Oh, M. G. Hahm, U. J. Kim, B. Cho
Summary: The study demonstrates a brain-inspired synaptic device based on PVDF-TrFE/Si NW FeFET structure, achieving reliable symmetric synaptic plasticity behavior and high pattern recognition accuracy, as well as energy-efficient logic circuits capability.
Article
Nanoscience & Nanotechnology
Ojun Kwon, Seyoung Oh, Heejeong Park, Soo-Hong Jeong, Woojin Park, Byungjin Cho
Summary: This study proposes a floating gate indium gallium zinc oxide (IGZO) synaptic device with an aluminum trapping layer and investigates the correlation between its electrical parameters and pattern recognition accuracy. The study discovers the importance of pulse tuning conditions on conductance update and highlights the need to consider nonlinearity and cycle-to-cycle variation for high pattern recognition accuracy.
Article
Nanoscience & Nanotechnology
Hye Yeon Jang, Ojun Kwon, Jae Hyeon Nam, Jung-Dae Kwon, Yonghun Kim, Woojin Park, Byungjin Cho
Summary: In this study, reliable heterosynaptic characteristics were achieved using a memtransistor device with a MoS2/ZrO2-x heterostructure. By inserting an insulating ZrO2-x layer below the MoS2, the Schottky barrier height was effectively modulated, allowing for dual-terminal stimulated multilevel conductance. The device also exhibited long-term potentiation/depression cycling and stable pulse cycling behavior.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Heejeong Park, Seyoung Oh, Soo-Hong Jeong, Ojun Kwon, Hyun Young Seo, Jung-Dae Kwon, Yonghun Kim, Woojin Park, Byungjin Cho
Summary: This study demonstrates the reliable gate-tunable resistive switching characteristics of an IGZO memtransistor and its potential for precise control of heterosynaptic plasticity and multilevel states. It also shows remarkable endurance in long-term potentiation and depression cycling. The high pattern recognition accuracies obtained from artificial neural network simulation further validate its performance.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Jung-Min Choi, Hye Yeon Jang, Ah Ra Kim, Jung-Dae Kwon, Byungjin Cho, Min Hyuk Park, Yonghun Kim
Summary: An ultra-flexible 2D-MoS2/Si heterojunction-based photodetector was successfully fabricated through atmospheric-pressure plasma enhanced chemical vapor deposition, showing responsiveness to near infrared light and excellent photoresponsivity under various bending radii. This device has significant potential for use in next-generation flexible and patchable optoelectronic devices.