4.8 Article

Resistance Switching and Failure Behavior of the MoOx/Mo2C Heterostructure

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 35, Pages 41857-41865

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c06663

Keywords

2D material; MoOx/Mo2C; heterostructure; electrical property; resistance switching

Funding

  1. National Natural Science Foundation of China [51772335, 52072415]
  2. Guangdong Basic and Applied Basic Research Foundation [2021A1515012387]
  3. Science and Technology Program of Guangzhou [201904010450]

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This study reports the RS behaviors of vertical MoOx/Mo2C heterostructures and uncovers the failure behavior under higher work voltage, demonstrating excellent RS performance and potential applications in related memory devices and biological neural networks.
With the rapid demand for high-performance and power-efficient memristive and synaptic systems, more 2D heterostructures with improved resistance switching (RS) properties are still urgently in need for next-generation devices. Here, we report the RS behaviors of vertical MoOx/Mo2C heterostructures fabricated by controllable thermal oxidation and uncover the failure behavior for the first time. It is found that the MoOx/Mo2C heterostructure exhibits bipolar RS with a low set/reset voltage of +0.5/-0.3 V, an ultralow power consumption of 5 x 10(-8) W, and an on/off ratio of 10(2), which is ascribed to the transport of the internal oxygen ions of MoOx. Furthermore, the failure behavior of RS behaviors of the MoOx/Mo2C heterostructure under a higher work voltage is revealed. It indicates that the amorphization of the pristine crystalline MoOx layer could block the movement of the internal oxygen ions in the vertical direction. The excellent RS performance induced by the synergy of MoOx and Mo2C and the demonstration of the failure behavior enable the potential applications of the 2D heterostructure in related memory devices and biological neural networks.

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