☆ 4.8 Article

Quasi-2D Halide Perovskite Memory Device Formed by Acid-Base Binary Ligand Solution Composed of Oleylamine and Oleic Acid

ACS APPLIED MATERIALS & INTERFACES (2021)

Journal

ACS APPLIED MATERIALS & INTERFACES

Volume 13, Issue 34, Pages 40891-40900

Publisher

AMER CHEMICAL SOC

DOI: 10.1021/acsami.1c09725

Keywords

Quasi-2D perovskite; acid-base reaction; oleylamine; oleic acid; binary ligand; write-once read-many memory (WORM) device; protonation

Funding

National Research Foundation of Korea (NRF) [2019R1A2B5B02070657]
Creative Materials Discovery Program [NRF2019M3D1A1078299]
Brain Pool Program - Ministry of Science and ICT through the National Research Foundation of Korea [2020H1D3A2A01064555]
National Science Foundation [1355678, 1547771]
U.S. Air Force Office of Scientific Research/AOARD [FA2386-20-1-4085]
National Research Foundation of Korea [2019R1A2B5B02070657, 2020H1D3A2A01064555] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Automated Summary New
Abstract

Organometal halide perovskite materials have been utilized to fabricate resistive-switching memory devices with nonvolatile write-once read-many characteristics. Quasi-2D films demonstrate low trap density and operate through the formation of conductive filaments, while 3D films exhibit hysteresis behavior. High current channels along perovskite grain boundaries play a crucial role in the conductive low-resistive-switching behavior in WORM devices.

Organometal halide perovskite materials are receiving significant attention for the fabrication of resistive-switching memory devices based on their high stability, low power consumption, rapid switching, and high ON/OFF ratios. In this study, we synthesized 3D FAPbBr(3) and quasi-2D (RNH3)(2)(FA)(1)Pb2Br7 films using an acid-base binary ligand solution composed of oleylamine (OlAm) and oleic acid in toluene. The quasi-2D (RNH3)(2)(FA)(1)Pb2Br7 films were synthesized by controlling the protonated OlAm (RNH3+) solution concentration to replace FA(+) cations with large organic RNH3+ cations from 3D FAPbBr(3) perovskites. The quasi-2D (RNH3)(2)(FA)(1)Pb2Br7 devices exhibited nonvolatile write-once read-many (WORM) memory characteristics, whereas the 3D FAPbBr(3)D only exhibited hysteresis behavior. Analysis of the 3D FAPbBr(3) device indicated operation in the trap-limited space-charge-limited current region. In contrast, quasi-2D (RNH3)(2)(FA)(1)Pb2Br7 devices provide low trap density that is completely filled by injected charge carriers and then subsequently form conductive filaments (CFs) to operate as WORM devices. Nanoscale morphology analysis and an associated current mapping study based on conductive atomic force microscopy measurements revealed that perovskite grain boundaries serve as major channels for high current, which may be correlated with the conductive low-resistive-switching behavior and formation of CFs in WORM devices.

Authors

I am an author on this paper

Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8

Not enough ratings

Secondary Ratings

Novelty

Significance

Scientific rigor

Rate this paper

Two-Terminal Nonvolatile Write-Once-Read-Many-Times Memory Based on All-Inorganic Halide Perovskite

Zhipeng Yu, Xiaofeng Zhao, Chunpeng Ai, Xin Fang, Xiaohan Zhao, Yanchao Wang, Hongquan Zhang

Summary: Write-once-read-many-times (WORM) memory, an important non-volatile memory type, achieves read-only state after write operation and is widely used in data security storage. In recent years, halide perovskites have become a research hotspot material for this memory due to their excellent properties.

MICROMACHINES (2023)