4.7 Article

27.9% Efficient Monolithic Perovskite/Silicon Tandem Solar Cells on Industry Compatible Bottom Cells

Journal

SOLAR RRL
Volume 5, Issue 7, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.202100244

Keywords

industry; perovskites; silicon; tandem solar cells

Funding

  1. HyPerCells (Hybrid Perovskite Solar Cells, ) joint Graduate School
  2. German Federal Ministry for Economic Affairs and Energy (BMWi) through the PersiST project [0324037C]
  3. ProTandem [0324288C]
  4. Federal Ministry of Education and Research (BMBF) [03SF0540]
  5. Helmholtz Association within the project HySPRINT Innovation lab
  6. Helmholtz Association within the project TAPAS (Tandem Perovskite and Silicon solar cells-Advanced optoelectrical characterization, modelling, and stability)
  7. Alexander von Humboldt Foundation via the Feodor Lynen program
  8. Federal Ministry for Economic Affairs and Energy [03EE1017C]
  9. Slovenian Research Agency (ARRS) [P2-0197, J2-1727]
  10. Projekt DEAL

Ask authors/readers for more resources

Recent research shows that tandem perovskite/silicon solar cells based on 100 μm thick CZ silicon have efficiency close to that of commonly used front-side polished FZ-Si, while also being more cost-effective. As the silicon thickness decreases, the perovskite bandgap needs to be increased. Future developments in tandem solar cells need to ensure stable compositions with lossless interfaces at bandgaps around or above 1.7 eV.
Monolithic perovskite/silicon tandem solar cells recently surpass the efficiency of silicon single-junction solar cells. Most tandem cells utilize >250 mu m thick, planarized float-zone (FZ) silicon, which is not compatible with commercial production using <200 mu m thick Czochralski (CZ) silicon. The perovskite/silicon tandem cells based on industrially relevant 100 mu m thick CZ-silicon without mechanical planarization are demonstrated. The best power conversion efficiency (PCE) of 27.9% is only marginally below the 28.2% reference value obtained on the commonly used front-side polished FZ-Si, which are about three times thicker. With both wafer types showing the same median PCE of 27.8%, the thin CZ-Si-based devices are preferred for economic reasons. To investigate perspectives for improved current matching and, therefore, further efficiency improvement, optical simulations with planar and textured silicon have been conducted: the perovskite's bandgap needs to be increased by approximate to 0.02 eV when reducing the silicon thickness from 280 to 100 mu m. The need for bandgap enlargement has a strong impact on future tandem developments ensuring photostable compositions with lossless interfaces at bandgaps around or above 1.7 eV.

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