4.6 Article

Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu2O Photocathodes

Journal

MICROMACHINES
Volume 12, Issue 3, Pages -

Publisher

MDPI
DOI: 10.3390/mi12030338

Keywords

photoelectrochemical; Cu2O; photocathodes; Al-doped ZnO; charge transport; ALD

Funding

  1. Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2019R1A6A1A03033215]
  2. Korea government (MSIT) [2021R1A2C3011870]
  3. National Research Foundation of Korea [2021R1A2C3011870] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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By employing AZO overlayers with increased built-in potential, uniform coating, and without compromising the absorption efficiency, the charge transport efficiency and photoelectrochemical performance of p-type Cu2O photocathodes have been effectively improved.
An effective strategy for improving the charge transport efficiency of p-type Cu2O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potential at the Cu2O/AZO interface as well as an excellent conformal coating with a thin thickness on irregular Cu2O. Considering the thin thickness of the AZO overlayers, it is expected that the composition of the Al and the layer stacking sequence in the ALD process will significantly influence the charge transport behavior and the photoelectrochemical (PEC) performance. We designed various stacking orders of AZO overlayers where the stacking layers consisted of Al2O3 (or Al) and ZnO using the atomically controlled ALD process. Al doping in ZnO results in a wide bandgap and does not degrade the absorption efficiency of Cu2O. The best PEC performance was obtained for the sample with an AZO overlayer containing conductive Al layers in the bottom and top regions. The Cu2O/AZO/TiO2/Pt photoelectrode with this overlayer exhibits an open circuit potential of 0.63 V and maintains a high cathodic photocurrent value of approximately -3.2 mA cm(-2) at 0 V-RHE for over 100 min.

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