Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing
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Title
Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing
Authors
Keywords
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Journal
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
Volume 118, Issue 12, Pages e2021768118
Publisher
Proceedings of the National Academy of Sciences
Online
2021-03-18
DOI
10.1073/pnas.2021768118
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- (2017) Junfeng Wang et al. Physical Review Applied
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- Fabrication of High-Q Nanobeam Photonic Crystals in Epitaxially Grown 4H-SiC
- (2015) David O. Bracher et al. NANO LETTERS
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- Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide
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