Journal
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
Volume 118, Issue 20, Pages -Publisher
NATL ACAD SCIENCES
DOI: 10.1073/pnas.2026591118
Keywords
hidden order; URu2Si2; hybridization; pressure; isoelectronic
Categories
Funding
- US Department of Energy (DOE), Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-FG02-04ER46105]
- US NSF [DMR 1810310]
- National Nuclear Security Administration under the Stewardship Science Academic Alliance Program through the US DOE [DE-NA0002909]
- NSF [DMR-1157490]
- State of Florida
- DOE
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Electrical resistivity measurements were performed on single crystals of URu2-xOsxSi(2) up to x = 0.28 under hydrostatic pressure up to 2 GPa, revealing that increasing Os concentration leads to lattice expansion, enhanced hidden-order (HO) phase, and a shift towards a large-moment antiferromagnetic (LMAFM) phase. Pressure, Fe substitution, and Os substitution are the only known perturbations that enhance the HO phase and induce the first-order transition to the LMAFM phase in URu2Si2.
Electrical resistivity measurements were performed on single crystals of URu2-xOsxSi(2) up to x = 0.28 under hydrostatic pressure up to P = 2 GPa. As the Os concentration, x, is increased, 1) the lattice expands, creating an effective negative chemical pressure P-ch(x); 2) the hidden-order (HO) phase is enhanced and the system is driven toward a large-moment antiferromagnetic (LMAFM) phase; and 3) less external pressure Pc is required to induce the HO -> LMAFM phase transition. We compare the behavior of the T(x, P) phase boundary reported here for the URu2-xOsxSi2 system with previous reports of enhanced HO in URu2Si2 upon tuning with P or similarly in URu2-xFexSi2 upon tuning with positive P-ch(x). It is noteworthy that pressure, Fe substitution, and Os substitution are the only known perturbations that enhance the HO phase and induce the first-order transition to the LMAFM phase in URu2Si2. We present a scenario in which the application of pressure or the isoelectronic substitution of Fe and Os ions for Ru results in an increase in the hybridization of the U-5f-electron and transition metal d-electron states which leads to electronic instability in the paramagnetic phase and the concurrent formation of HO (and LMAFM) in URu2Si2. Calculations in the tight-binding approximation are included to determine the strength of hybridization between the U-5f-electron states and the d-electron states of Ru and its isoelectronic Fe and Os substituents in URu2Si2.
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