Journal
OPTICS LETTERS
Volume 46, Issue 10, Pages 2288-2291Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.423999
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Funding
- China Scholarship Council
- Universite Catholique de Louvain Co-Funding Fellowship [CSC201806130158]
- EU [720887]
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This study demonstrates a highly broadband photo-sensitive In2S3/CIGS heterojunction photodiode with excellent photoresponsivity and detectivity. Additionally, the CIGS photodiode shows outstanding performance under weak light conditions as well.
Cu(In, Ga)Se-2 (CIGS) is a promising light harvesting material for large-area broadband photodetection, but it has been rarely studied up to now. Here an In2S3/CIGS heterojunction photodiode on steel is shown to be highly broadband photo-sensitive, with a photoresponsivity over 0.8 A/W, an external quantum efficiency over 100%, and a detectivity over 8 x 10(10) Jones from 505 to 910nm under a reverse bias of 1 V. Moreover, the CIGS photodiode exhibits an outstanding weak light detection ability (i.e., at light power density of 20 mu W/cm(2)), reaching a record. responsivity of 2.06 A/W, an impressive EQE of 293%, and a good detectivity of 2.3 x 10(11) Jones at 870 nm under 1 V reverse bias. Importantly, the CIGS photodiode, working as a self-powered photodetector, under 0 V, shows a record. detectivity of similar to 3.4 x 10(12) Jones with a high responsivity of similar to 0.44 A/W and a high EQE of similar to 63%, at 870 nm. (C) 2021 Optical Society of America
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