4.8 Article

Dielectric Screening Modulates Semiconductor Nanoplatelet Excitons

Journal

JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 12, Issue 20, Pages 4958-4964

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.1c00624

Keywords

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Funding

  1. National Science Foundation [1905242]
  2. US Department of Energy, Office of Science, Basic Energy Sciences, under QI grant Award [DE-SC0019245]
  3. UCLA Department of Chemistry and Biochemistry
  4. ART program at William Paterson University
  5. Research Corporation for Scientific Advancement Cottrell Scholar Award

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The study synthesizes MX (M = Cd, Hg; X = Se, Te) NPLs of varying thicknesses and uses the Elliott model to extract exciton binding energies. It reveals that the exciton binding energy is influenced by both internal and external dielectric effects as well as the thickness of the semiconductor material. Experimental results demonstrate that dielectric screening increases the exciton binding energy, emphasizing the significance of surface modification in controlling photophysics and device properties.
The influence of external dielectric environments is well understood for 2D semiconductor materials but overlooked for colloidally grown II-VI nanoplatelets (NPLs). In this work, we synthesize MX (M = Cd, Hg; X = Se, Te) NPLs of varying thicknesses and apply the Elliott model to extract exciton binding energies-reporting values in good agreement with prior methods and extending to less studied cadmium telluride and mercury chalcogenide NPLs. We find that the exciton binding energy is modulated both by the relative effect of internal vs external dielectric and by the thickness of the semiconductor material. An analytical model shows dielectric screening increases the exciton binding energy relative to the bulk by distorting the Coulombic potential across the NPL surface. We further confirm this effect by decreasing and recovering the exciton binding energy of HgTe NPLs through washing in polarizable solvents. Our results illustrate NPLs are colloidal analogues of van der Waals 2D semiconductors and point to surface modification as an approach to control photophysics and device properties.

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