GaN/Al2O3 core-shell nanowire based flexible and stable piezoelectric energy harvester

Flexible and stable piezoelectric energy harvesters (PEHs) were fabricated based on polydimethylsiloxane-embedded m-axis GaN/Al2O3 core-shell nanowires (NWs) transferred to indium (In)-deposited flexible substrates. The piezoelectric performance was optimized by controlling the Al2O3 shell thickness on GaN NWs. The huge barrier height of Al2O3 suppresses the junction current screening effect, and the remnant piezopotential in the GaN region at the GaN-Al2O3 interface modulates the transportation of carriers. Because of the significant suppression of the junction current screening and reduction in the leakage current, the PEHs could effectively harvest mechanical energy, even from static strain. The PEH based on core-shell NWs with a controlled Al2O3 thickness of 6 nm exhibited the maximum piezoelectric performance. Reduced piezoelectric performance was observed by increasing and decreasing the thickness of the Al2O3 shell from 6 nm. For higher thickness, the performance was reduced because of the significant voltage drop across the GaN-Al2O3 interface. However, for lower thickness the performance was reduced due to the direct tunneling of the current from the GaN-Al2O3 interface. The optimized PEH also worked as an energy supplier to demonstrate the light emitting diode operation. (C) 2020 Elsevier B.V. All rights reserved.

Automated summary

Flexible and stable piezoelectric energy harvesters were successfully fabricated using polydimethylsiloxane-embedded m-axis GaN/Al2O3 core-shell nanowires transferred to indium-deposited flexible substrates. Optimizing the piezoelectric performance by controlling the Al2O3 shell thickness showed that a 6 nm thickness exhibited the maximum performance, with performance decreasing when the thickness was increased or decreased. The PEHs were effective in harvesting mechanical energy, even from static strain, and also demonstrated energy supply capabilities for operating a light emitting diode.