Journal
CARBON
Volume 174, Issue -, Pages 540-555Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2020.12.072
Keywords
Van der waals heterostructures; Valley polarization; Magnetic anisotropy; Dzyaloshinskii-moriya interaction
Funding
- National Natural Science Foundation of China [51871161]
- Key Project of Natural Science Foundation of Tianjin City [18JCZDJC99400]
- High Performance Computing Center of Tianjin University, China
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The electronic structure and magnetic properties of 2D Gr/VSeX heterostructures were systematically investigated using density functional theory. It was found that the electronic structure and magnetic properties of Gr/VSeTe heterostructure can be modulated by external electric field, interlayer distance, and in-plane biaxial strain, with the in-plane biaxial strain effects on DMI being more pronounced. By decreasing the interlayer distance of Gr/VSeTe heterostructure, the valley splitting of graphene can be effectively enhanced.
Two-dimensional (2D) heterostructures based on graphene (Gr) and 2D magnetic materials have attracted much attention due to the unique properties, which have the potential applications in nano-electronics, optoelectronics and spintronics. Here, the electronic structure and magnetic properties of 2D Gr/Janus 2H-VSeX (X = S, Te) (Gr/VSeX) heterostructures are investigated systematically by density functional theory. The Dirac cones of graphene in Gr/VSeX heterostructures open a band gap, where the valley splitting appears at K and K' points by considering spin-orbit coupling effect. By comparing to Janus VSeTe monolayer, the valley splitting and Dzyaloshinskii-Moriya interaction (DMI) of Gr/VSeTe heterostructure are significantly enhanced. Meanwhile, the electronic structure and magnetic properties of Gr/VSeTe heterostructure can also be modulated by external electric field, interlayer distance and in-plane biaxial strain, where the in-plane biaxial strain effects on DMI is more pronounced. Moreover, the valley splitting of graphene (VSeTe) can be effectively enhanced by decreasing the interlayer distance of Gr/VSeTe heterostructure. These results show the potential applications of 2D magnetic heterostructures in nonoelectronics, spintronics and valleytronics. (C) 2020 Elsevier Ltd. All rights reserved.
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