4.8 Review

Stacking-Engineered Heterostructures in Transition Metal Dichalcogenides

Journal

ADVANCED MATERIALS
Volume 33, Issue 16, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202005735

Keywords

2D materials; heterostructures; stacking; transition metal dichalcogenides; twist angle

Funding

  1. National Natural Science Foundation of China [11704185, 61935017]
  2. Natural Science Foundation of Jiangsu Province, China [BK20171021]
  3. High-level talents in six industries in the Jiangsu Province [XCL-020]
  4. Projects of International Cooperation and Exchanges NSFC [51811530018]

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The article presents a systematic review of transition metal dichalcogenide stacking-engineered heterostructures, from controllable fabrication to typical characterization, and stacking-correlated physical behaviors. Recent advances in stacking design, such as stacking sequence, twist angles, and moire superlattice heterojunctions, are comprehensively summarized. The remaining challenges and possible strategies for using stacking engineering to tune the properties of 2D materials are also outlined.
The layer-by-layer assembly of 2D transition metal dichalcogenide monolayer blocks to form a 3D stack, with a precisely chosen sequence/angle, is the newest development for these materials. In this way, one can create van der Waals heterostructures (HSs), opening up a new realm of materials engineering and novel devices with designed functionalities. Herein, a detailed systematic review of transition metal dichalcogenide stacking-engineered heterostructures, from controllable fabrication to typical characterization, and stacking-correlated physical behaviors is presented. Furthermore, recent advances in stacking design, such as stacking sequence, twist angles, and moire superlattice heterojunctions, are also comprehensively summarized. Finally, the remaining challenges and possible strategies for using stacking engineering to tune the properties of 2D materials are also outlined.

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