Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics

1D materials have attracted significant research interest due to their unique quantum confinement effects and edge-related properties. Atomically thin 1D nanoribbons are particularly interesting because it is a valuable platform with the physical limits of both thickness and width. Here, a catalyst-free growth method is developed and the growth of Bi2O2Se nanostructures with tunable dimensionality is achieved. Significantly, Bi2O2Se nanoribbons with a thickness down to 0.65 nm, corresponding to a monolayer, are successfully grown for the first time. Electrical and optoelectronic measurements show that Bi2O2Se nanoribbons possess decent performance in terms of mobility, on/off ratio, and photoresponsivity, suggesting their promise for devices. This work not only reports a new method for the growth of atomically thin nanoribbons but also provides a platform to study properties and applications of such nanoribbon materials at a thickness limit.

Automated summary

A catalyst-free growth method for Bi2O2Se nanoribbons with tunable dimensionality was developed in this study, leading to the successful growth of nanoribbons with a thickness down to a monolayer. The electrical and optoelectronic measurements showed decent performance of the nanoribbons, suggesting their promise for devices.