4.8 Article

Low-Temperature Tunneling Electroresistance in Ferromagnetic Metal/Ferroelectric/Semiconductor Tunnel Junctions

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 19, Pages 23282-23288

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c05366

Keywords

ferroelectric tunnel junctions; quantum interference effects; tunneling electroresistance; ON/OFF current ratio; electron-electron interaction

Funding

  1. National Natural Science Foundation of China [11874203, 61822403, U1732159]
  2. Anhui Provincial Natural Science Foundation [2008085QE195]
  3. Youth Research Fund Project of Anhui University of Technology [QZ201903]
  4. Jiangsu Planned Projects for Postdoctoral Research Funds [2020Z158]

Ask authors/readers for more resources

This study investigates the influence of quantum interference effects on tunneling electroresistance in La0.7Sr0.3MnO3/BaTiO3/Nb:SrTiO3 FTJs at low temperatures. It is found that the ON/OFF current ratio can be significantly enhanced by manipulating the ferroelectric polarization effect.
Ferroelectric tunnel junctions (FTJs) as artificial synaptic devices are promising candidates for the building block of nonvolatile data storage devices. However, a small ON/OFF ratio of FTJs limits their application in low-temperature operations. In this work, the influence of quantum interference effects on tunneling electroresistance in the La0.7Sr0.3MnO3/BaTiO3/Nb:SrTiO3 (ferromagnetic metal/ferroelectric/semiconductor) FTJ at low temperatures is investigated. The Current-voltage curves are observed in the tunnel junction from 300 to 10 K with a six-unit-cell thick BaTiO3 film by the ferroelectric polarization effect. First, the ON/OFF current ratio increases from 300 to 30 K due to the increase of polarization in the ferroelectric barrier, and then, it gradually decreases when the temperature drops below 30 K. An anomalous ON/OFF current ratio of similar to 10(5) is obtained at 30 K. The low-temperature tunneling properties in the FTJ are associated with a low-temperature resistivity minimum in the ferromagnetic metal layer by the electron-electron interaction, which increases the La0.7Sr0.3MnO3/BaTiO3 interface resistance, leading to a higher resistance state and lower IOFF for the OFF state. As a result, the ON/OFF current ratio is abruptly enhanced at 30 K. Our results emphasize the crucial role of transport properties of La0.7Sr0.3MnO3 in FTJs and pave the way for the design and application of FTJs at low temperatures.

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