Two-dimensional centrosymmetrical antiferromagnets for spin photogalvanic devices

Spin-dependent photogalvanic effect (PGE) in low-dimensional magnetic systems has recently attracted intensive attention. Based on first-principle transport calculations and symmetry analyses, we propose a robust scheme to generate pure spin current by PGE in centrosymmetric materials with spin polarization antisymmetry. As a demonstration, the idea is successfully applied to a photoelectric device constructed with a zigzag graphene nanoribbon (ZGNR), which has intrinsic antiferromagnetic coupling between the two edges and spin degenerate band structure. It suggests that spin splitting is not a prerequisite for pure spin current generation. More interestingly, by further introducing external transverse electric fields to the two leads to lift the spin degeneracy, the device may behave multifunctionally, capable of producing fully spin-polarized current or pure spin current, depending on whether the fields in the two leads are parallel or antiparallel. Very importantly, our scheme of pure spin current generation with PGE is not limited to ZGNR and can be extended to other two-dimensional (2D) centrosymmetric magnetic materials with spin polarization antisymmetry, suggesting a promising category of 2D platforms for PGE-based pure spin current generation.

Automated summary

A robust scheme for generating pure spin current in centrosymmetric materials with spin polarization antisymmetry is proposed, successfully demonstrated on a photoelectric device made of zigzag graphene nanoribbon (ZGNR). The device can exhibit multifunctionality by introducing external transverse electric fields to lift spin degeneracy, capable of producing fully spin-polarized or pure spin current depending on the field orientation. This scheme is not limited to ZGNR and can be extended to other 2D centrosymmetric magnetic materials, suggesting a promising platform for PGE-based pure spin current generation.