Article
Multidisciplinary Sciences
Keisuke Fukuda, Satoru Miyamoto, Masahiro Nakahara, Shota Suzuki, Marwan Dhamrin, Kensaku Maeda, Kozo Fujiwara, Yukiharu Uraoka, Noritaka Usami
Summary: A simple and low-cost method for large-area semiconductor growth on crystalline silicon is proposed. The use of alloyed paste for screen printing and annealing can lead to flat SiGe films with higher Ge composition.
SCIENTIFIC REPORTS
(2022)
Article
Physics, Applied
Jianfei Shen, Xuelin Yang, Huayang Huang, Danshuo Liu, Zidong Cai, Zhenghao Chen, Cheng Ma, Fujun Xu, Liwen Sang, Xinqiang Wang, Weikun Ge, Bo Shen
Summary: The study examined the interaction between carbon impurities and threading dislocations in GaN grown on Si substrates, finding a linear relationship between carbon incorporation and dislocation density. Carbon-decorated dislocations were found to act as acceptor-like traps, leading to important scattering centers that cannot be ignored. By reducing the density of carbon-decorated dislocations, a record room-temperature electron mobility with high-quality n(-)-GaN on Si was achieved.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Manyu Dang, Huiwen Deng, Suguo Huo, Raghavendra R. Juluri, Ana M. Sanchez, Alwyn J. Seeds, Huiyun Liu, Mingchu Tang
Summary: The monolithic integration of III-V optoelectronic devices on the Si platform is becoming popular due to its advantages of low cost, less complexity, and high yield for mass production. This paper investigates different dislocation filter layers (DFLs) for reducing the threading dislocation density (TDD) in GaAs buffer layers on Si substrates. The InAlGaAs asymmetric step-graded buffer layer (ASG) shows the lowest TDD value and surface roughness. Further optimization of the InAlGaAs ASG through thermal cyclic annealing achieves a low surface TDD for a 2 & mu;m GaAs/InAlGaAs ASG buffer layer grown on Si.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Jin-Ji Dai, Cheng-Wei Liu, Ssu-Kuan Wu, Sa-Hoang Huynh, Jhen-Gang Jiang, Sui-An Yen, Thi Thu Mai, Hua-Chiang Wen, Wu-Ching Chou, Chih-Wei Hu, Rong Xuan
Summary: By controlling the SiH4 flow rate, the properties of AlGaN/AlN/GaN high electron mobility transistor structures can be improved, reducing impurity density and enhancing electronic properties.
Article
Chemistry, Multidisciplinary
Yong Du, Zhenzhen Kong, Muhammet S. Toprak, Guilei Wang, Yuanhao Miao, Buqing Xu, Jiahan Yu, Ben Li, Hongxiao Lin, Jianghao Han, Yan Dong, Wenwu Wang, Henry H. Radamson
Summary: This study successfully grows high-quality Ge epitaxial layers on Si substrates using RPCVD, systematically investigating the morphology and crystal quality of Ge layers under different conditions. The results demonstrate the key factors influencing the quality of Ge layers and highlight the importance of strain and defect formation in the Ge buffer layer.
Article
Materials Science, Multidisciplinary
Yang Li, Boyang Gu, Adrian Diaz, Simon R. Phillpot, David L. Mcdowell, Youping Chen
Summary: The paper presents a multiscale study of the kinetic processes of the heteroepitaxial growth of the PbSe/PbTe (111) and PbTe/PbSe(001) systems, using the Concurrent Atomistic-Continuum (CAC) method as the simulation tool. The simulations have reproduced the growth mode and layer morphology observed in experiments, and visualized the formation and evolution of dislocations.
Article
Chemistry, Multidisciplinary
Serhii Kryvyi, Hryhorii Stanchu, Oleksii Liubchenko, Nadiia Safriuk-Romanenko, Andrian Kuchuk, Aleksandra Wierzbicka, Marta Sobanska, Anna Reszka, Zbigniew R. Zytkiewicz, Vasyl Kladko
Summary: Self-assembled GaN nanowires were used as buffer structures for growing GaN layers on Si(111). The study found that while GaN nanowires eliminated mismatch strain, cracks appeared in the coalesced GaN layer. Finite-element simulations indicated that these cracks occurred during postgrowth cooling due to the mismatch of thermal expansion coefficients between GaN and Si. Moreover, the coalesced GaN layer experienced tensile stresses caused by the bending of the nanowires during cooling.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Materials Science, Multidisciplinary
Tao Feng, Shuo Zhang, Kailai Yang, Qi Chen, Meng Liang, Jianchang Yan, Xiaoyan Yi, Junxi Wang, Jinmin Li, Zhiqiang Liu
Summary: This study demonstrates the growth of high-quality GaN films by using specially designed self-organized defective graphene (SOD Gr) as a buffer layer on GaN templates. The SOD Gr allows for the relaxation of strain in GaN epilayers and blocks the upward dispersion of dislocations in GaN templates.
ADVANCED OPTICAL MATERIALS
(2022)
Article
Crystallography
Youhua Zhu, Tao Hu, Meiyu Wang, Yi Li, Mei Ge, Xinglong Guo, Honghai Deng, Zhitao Chen
Summary: InAlN/GaN heterostructures were successfully grown on GaN/sapphire and AlN/sapphire substrates using metal organic chemical vapor deposition. The epitaxial quality was confirmed by X-ray diffraction, and transmission electron microscopy characterized micro-structural propagation defects originating from extended threading dislocations in the GaN layer. Cathodoluminescence peak shifting was observed with increasing acceleration voltage, attributed to factors such as inhomogeneous composition and internal absorption. Optimization of the structural parameters of the epilayers is expected to improve epitaxial quality and optoelectronic device design.
Article
Chemistry, Physical
Seungwan Woo, Eungbeom Yeon, Rafael Jumar Chu, Jihoon Kyhm, Hoki Son, Ho Won Jang, Daehwan Jung, Won Jun Choi
Summary: Epitaxial growth of bulk InAs1-xSbx layer on GaAs substrate is a promising method for cost-effective long-wavelength infrared sensors. This study focuses on the analysis of metamorphic InAsSb layers grown on an InAs/GaAs virtual substrate with optimized growth conditions and group-V flux control. The research reveals that increasing Sb composition leads to significant surface roughening, but lowering the growth temperature mitigates this while allowing strain relaxation. Furthermore, a high Sb composition also results in a dramatic increase in threading dislocation density. The narrow energy bandgap achieved in the InAs0.42Sb0.58 layer demonstrates its potential for long-wavelength infrared optoelectronics applications.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Mohd Faiz Bin Amin, Takeshi Hizawa, Jose A. A. Piedra-Lorenzana, Tetsuya Nakai, Yasuhiko Ishikawa
Summary: A patterned Si substrate is used to reduce the threading dislocation density in a Ge epitaxial film. The Ge film is grown on the patterned Si using chemical vapor deposition with a two-step growth method. The trapping of dislocations in the trench regions between the Si strips contributes to the TDD reduction in the Ge film.
JOURNAL OF ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
HoSung Kim, Tae-Soo Kim, Shinmo An, Duk-Jun Kim, Kap Joong Kim, Young-Ho Ko, Joon Tae Ahn, Won Seok Han
Summary: The study demonstrated the growth of GaAs on Si using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). It was found that Si substrate thickness mainly determines the wafer-scale bowing, while DFLs can effectively reduce the threading dislocation density (TDD). Additionally, the strained DFLs were effective in blocking the propagation of TDD on the Si substrate, allowing for large-scale integration of GaAs with less bowing and low TDD.
Article
Chemistry, Multidisciplinary
Pierre Lottigier, Davide Maria Di Paola, Duncan T. L. Alexander, Thomas F. K. Weatherley, Pablo Saenz de Santa Maria Modrono, Danxuan Chen, Gwenole Jacopin, Jean-Francois Carlin, Raphael Butte, Nicolas Grandjean
Summary: By inserting an In-containing underlayer during the growth of InGaN quantum wells (QWs) on thin GaN buffer layers, the emission efficiency of the QWs on silicon substrates is significantly increased. This study also reveals the crucial role of point defects in limiting the efficiency of InGaN QWs, even with a lower density compared to threading dislocations.
Article
Materials Science, Multidisciplinary
Chen Shang, Jennifer Selvidge, Eamonn Hughes, Justin C. Norman, Aidan A. Taylor, Arthur C. Gossard, Kunal Mukherjee, John E. Bowers
Summary: With recent developments in high-speed and high-power electronics and Si-based photonic integration, monolithic III-V/Si integration through epitaxial methods is gaining momentum. A novel asymmetric step-graded filter structure grown by molecular beam epitaxy (MBE) has been proposed to reduce threading dislocation density (TDD) for high-quality GaAs on Si growth, providing a clear pathway to further reduce defect density down to theoretical limit.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2021)
Article
Materials Science, Multidisciplinary
Jinbang Ma, Yachao Zhang, Yifan Li, Yixin Yao, Tao Zhang, Qian Feng, Zhen Bi, Lansheng Feng, Jincheng Zhang, Yue Hao
Summary: This work explores the difference between the annihilation of screw dislocation and edge dislocation, and finds that the density of edge dislocations remains almost unchanged during the growth from AlN to GaN. Through TEM analysis, it is discovered that the failure of AlGaN buffer layer and AlN insertion layer to block edge dislocations contributes to this phenomenon. This explanation may offer new insights for reducing dislocations and improving the crystal quality of GaN-on-Si.
