Impurity-related photovoltaic efficiency of (In,Ga)N/GaN quantum well-single intermediate band solar cell considering heavy hole impact

Design and Simulation of InGaNp-nJunction Solar Cell

(2015) A. Mesrane et al.   INTERNATIONAL JOURNAL OF PHOTOENERGY

Impurity-related binding energy in strained (In,Ga)N asymmetric coupled QWs under strong built-in electric field

(2015) Haddou El Ghazi et al.   SOLID STATE COMMUNICATIONS

Linear and nonlinear optical properties of ZnO/ZnS and ZnS/ZnO core shell quantum dots: Effects of shell thickness, impurity, and dielectric environment

(2013) Zaiping Zeng et al.   JOURNAL OF APPLIED PHYSICS

Modeling of InGaN p-n junction solar cells

(2013) Shih-Wei Feng et al.   Optical Materials Express

Simulation of High-Efficiency GaN/InGaN p-i-n Solar Cell With Suppressed Polarization and Barrier Effects

(2012) Jih-Yuan Chang et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

High internal and external quantum efficiency InGaN/GaN solar cells

(2011) Elison Matioli et al.   APPLIED PHYSICS LETTERS

III-V compound semiconductor screening for implementing quantum dot intermediate band solar cells

(2011) P. G. Linares et al.   JOURNAL OF APPLIED PHYSICS

Multiple levels in intermediate band solar cells

(2010) Antonio Luque et al.   APPLIED PHYSICS LETTERS

Temperature dependences of InxGa1−xN multiple quantum well solar cells

(2009) Ming-Jer Jeng et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

A molecular approach to the intermediate band solar cell: The symmetric case

(2008) N. J. Ekins-Daukes et al.   APPLIED PHYSICS LETTERS