4.4 Article

Examination of Suitable Bandgap Grading of Cu(InGa)Se2 Bottom Absorber Layers for Tandem Cell Application

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.202000658

Keywords

bandgap grading; bottom cell; Cu(InGa)Se-2; tandem cell applications; thin-film solar cells

Funding

  1. 2020 Post-Doc. Development Program of Pusan National University
  2. National Research Foundation of Korea (NRF) - Korea government (MSIT) [NRF-2018R1A5A1025594]

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This study discusses suitable bandgap grading of CIGS cells for bottom cell applications. It is found that CIGS devices with a single-back-graded bandgap are effective for bottom cells, but devices with a double-graded bandgap show reduced performance when top cell bandgap is lowered.
A high-efficiency tandem solar cell comprises of top and bottom solar cells. The bottom cell has a bandgap of approximate to 1.1 eV and is designed to absorb longer wavelengths of photons. A Cu(InGa)Se-2 (CIGS) is one of the candidates for a bottom solar cell, but its bandgap is not constant and is graded with depth. This study discusses suitable bandgap grading of CIGS cells for bottom cell applications. Three CIGS devices with different bandgap gradings are prepared for bottom cell evaluation. One device has a single-back-graded bandgap type whereas the others have double-graded bandgap types, which have been used for high-efficiency CIGS devices. The three CIGS devices exhibit similar conversion efficiencies of approximate to 20% but different solar cell parameters, due to their different shapes of bandgap grading. For the bottom cell evaluations, current-voltage measurements are performed using 720 nm (approximate to 1.72 eV) and 800 nm (approximate to 1.55 eV) long-pass filters. It is found that a CIGS device with a double-graded bandgap is unsuitable and/or shows reduced performance with a decreased top cell bandgap. By contrast, CIGS devices with a single-back-graded bandgap can be adopted as a bottom cell under top cell bandgaps of both approximate to 1.55 and approximate to 1.72 eV.

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