Journal
JOURNAL OF THE EUROPEAN OPTICAL SOCIETY-RAPID PUBLICATIONS
Volume 17, Issue 1, Pages -Publisher
EDP SCIENCES S A
DOI: 10.1186/s41476-021-00147-w
Keywords
Hafnia; Grain growth; Crystallization; Thin films; X-ray diffraction; Laser-induced damage threshold
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Funding
- Swiss Canton of St. Gallen
- Principality of Liechtenstein
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The study shows that thermal treatment of hafnia has an impact on the laser-induced damage threshold (LIDT), with a 1-hour treatment at 773K reducing the 0% LIDT, while a 5-hour treatment significantly increases the LIDT values.
In this work, we present our results about the thermal crystallization of ion beam sputtered hafnia on 0001 SiO2 substrates and its effect on the laser-induced damage threshold (LIDT). The crystallization process was studied using in-situ X-ray diffractometry. We determined an activation energy for crystallization of 2.6 +/- 0.5 eV. It was found that the growth of the crystallites follows a two-dimensional growth mode. This, in combination with the high activation energy, leads to an apparent layer thickness-dependent crystallization temperature. LIDT measurements @355 nm on thermally treated 3 quarter-wave thick hafnia layers show a decrement of the 0% LIDT for 1 h @773 K treatment. Thermal treatment for 5 h leads to a significant increment of the LIDT values.
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