Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 3, Pages 987-993Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3054358
Keywords
Doping; Silicon germanium; Stress; Semiconductor process modeling; Cryogenics; P-n junctions; Temperature dependence; Cryogenic; heterojunction bipolar transistor (HBT); quantum computing; silicon– germanium (SiGe); SiGe HBT; simulations; TCAD; variability
Funding
- Fermilab
- Department of Energy through the Novel Electronics for CryogenicQuantum Sensors Technology (NECQST) Program
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This investigation studies the physical mechanisms that can increase the variability of p-n junctions and silicon-germanium heterojunction bipolar transistors (SiGe HBTs) at cryogenic temperatures, including bandgap narrowing, mechanical stress, and the Ge profile. The impact of direct tunneling on cryogenic parameter variability in SiGe HBTs is also analyzed, and measurement results are compared with TCAD simulations to provide additional insights and discuss possible mitigation methods.
This investigation examines the physical mechanisms that can increase the variability of both p-n junctions and silicon-germanium heterojunction bipolar transistors (SiGe HBTs) at cryogenic temperatures. The important operative mechanisms responsible for device parameter variability include bandgap narrowing due to heavy doping, mechanical stress, and the Ge profile. The impact of direct tunneling on cryogenic parameter variability in SiGe HBTs is also examined. Measurement results are compared with TCAD simulations to provide additional insights, and possible mitigation methods are discussed.
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