Polycrystalline/Amorphous HfO2 Bilayer Structure as a Gate Dielectric for β-Ga2O3 MOS Capacitors

Published 2021 View Full Article

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Title
Polycrystalline/Amorphous HfO2 Bilayer Structure as a Gate Dielectric for β-Ga2O3 MOS Capacitors
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 3, Pages 1011-1015
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-01-30
DOI
10.1109/ted.2021.3053189

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