Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing

Published 2020 View Full Article

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Title
Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 2, Pages 638-644
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-12-12
DOI
10.1109/ted.2020.3040207

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